The Synergy Effect of Al/Ti Electrodes on Effective Electron Injection for n-Channel Transistors and Ambipolar Complementary Circuits

IF 4.8 2区化学 Q2 CHEMISTRY, PHYSICAL

The Journal of Physical Chemistry Letters Pub Date : 2024-12-19 DOI:10.1021/acs.jpclett.4c03140

Quanhua Chen, Lijian Chen, Hong Zhu, Walid Boukhili, Guangan Yang, Xiang Wan, Zhihao Yu, Chee Leong Tan, Huabin Sun, Dongyoon Khim, Yong Xu

{"title":"The Synergy Effect of Al/Ti Electrodes on Effective Electron Injection for n-Channel Transistors and Ambipolar Complementary Circuits","authors":"Quanhua Chen, Lijian Chen, Hong Zhu, Walid Boukhili, Guangan Yang, Xiang Wan, Zhihao Yu, Chee Leong Tan, Huabin Sun, Dongyoon Khim, Yong Xu","doi":"10.1021/acs.jpclett.4c03140","DOIUrl":null,"url":null,"abstract":"This paper reports the utilization of cost-effective bottom-contact electrodes composed of aluminum (Al) and titanium (Ti) to facilitate efficient electron injection in n-channel organic transistors. The optimized Al/Ti electrode has a low work function of around 4.03 eV, combining the high conductivity of Al with the stable interface of Ti, making it highly suitable for the electrodes of n-channel transistors. Diketopyrrolopyrrole (DPP)-based polymeric semiconductor transistors with Al/Ti electrodes result in a notable enhancement of the n-channel performance while also leading to a significant decrease in the p-channel properties. The transmission-line method (TLM) and low-frequency noise (LFN) techniques are employed to quantitatively evaluate the effects of Al/Ti electrodes on the charge injection of n-channel OFETs. Finally, complementary inverters composed of different electrodes (Au as a p-channel and Al/Ti as an n-channel electrode) are demonstrated. The inverters showed high static and dynamic characteristics such as ideal voltage transfer curves (VTCs) with minimal hysteresis, high gain (∼25), high noise margins (68%), and low static power consumption (19.9 μW).","PeriodicalId":62,"journal":{"name":"The Journal of Physical Chemistry Letters","volume":"38 1","pages":""},"PeriodicalIF":4.8000,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry Letters","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1021/acs.jpclett.4c03140","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

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Abstract

This paper reports the utilization of cost-effective bottom-contact electrodes composed of aluminum (Al) and titanium (Ti) to facilitate efficient electron injection in n-channel organic transistors. The optimized Al/Ti electrode has a low work function of around 4.03 eV, combining the high conductivity of Al with the stable interface of Ti, making it highly suitable for the electrodes of n-channel transistors. Diketopyrrolopyrrole (DPP)-based polymeric semiconductor transistors with Al/Ti electrodes result in a notable enhancement of the n-channel performance while also leading to a significant decrease in the p-channel properties. The transmission-line method (TLM) and low-frequency noise (LFN) techniques are employed to quantitatively evaluate the effects of Al/Ti electrodes on the charge injection of n-channel OFETs. Finally, complementary inverters composed of different electrodes (Au as a p-channel and Al/Ti as an n-channel electrode) are demonstrated. The inverters showed high static and dynamic characteristics such as ideal voltage transfer curves (VTCs) with minimal hysteresis, high gain (∼25), high noise margins (68%), and low static power consumption (19.9 μW).

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本文报告了如何利用由铝（Al）和钛（Ti）组成的高性价比底部接触电极来促进 n 沟道有机晶体管中的高效电子注入。优化后的铝/钛电极具有约 4.03 eV 的低功函数，结合了铝的高导电性和钛的稳定界面，使其非常适合 n 沟道晶体管的电极。使用铝/钛电极的基于二酮吡咯并吡咯（DPP）的聚合物半导体晶体管显著提高了 n 沟道性能，同时也显著降低了 p 沟道性能。利用传输线法（TLM）和低频噪声（LFN）技术，定量评估了铝/钛电极对 n 沟道 OFET 电荷注入的影响。最后，演示了由不同电极（金作为 p 沟道电极，铝/钛作为 n 沟道电极）组成的互补逆变器。这些逆变器显示出较高的静态和动态特性，如理想的电压传递曲线（VTC），具有最小的滞后、高增益（∼25）、高噪声裕度（68%）和低静态功耗（19.9 μW）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

The Journal of Physical Chemistry Letters CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY

CiteScore

9.60

自引率

7.00%

发文量

1519

审稿时长

1.6 months

期刊介绍： The Journal of Physical Chemistry (JPC) Letters is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, chemical physicists, physicists, material scientists, and engineers. An important criterion for acceptance is that the paper reports a significant scientific advance and/or physical insight such that rapid publication is essential. Two issues of JPC Letters are published each month.