Features of Ohmic Contact with an Ion-Induced p-GaAs Nanolayer

IF 0.5 Q4 PHYSICS, CONDENSED MATTER
V. M. Mikoushkin, E. A. Markova, D. A. Novikov
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Abstract

The properties of a metal contact with a p-GaAs layer ~8 nm thick induced by low-energy Ar+ ions on an n-GaAs wafer as a result of the conduction type conversion have been studied. The metal was deposited according to the standard technology on the surface of the semiconductor p-GaAs with a natural oxide layer partially restored when the sample was transferred to a deposition setup. To prevent metallization of the nanolayer the contact was not annealed. Therefore, a Schottky barrier emerged at the interface and a residual oxide layer retained. However, current–voltage characteristics showed that the formed contact is predominantly ohmic. It has been found that a high concentration of ion-induced defects radically reduces the width of the Schottky barrier and ensures the tunneling of holes and electrons of the semiconductor valence band through the barrier in the forward and reverse directions, respectively. It has been shown that ion bombardment of the p-GaAs semiconductor surface makes it possible to obtain an ohmic contact with any metal without annealing. It is concluded that the ion-stimulated modification of the semiconductor and the exclusion of annealing make it possible to obtain a tunnel ohmic contact with an extremely thin p-GaAs nanolayer coated with the residual layer of natural oxide.

Abstract Image

离子诱导p-GaAs纳米层欧姆接触特性研究
本文研究了低能Ar+离子在n-GaAs晶片上引起的约8 nm厚p-GaAs层的金属接触特性。根据标准工艺将金属沉积在半导体p-GaAs表面,当样品转移到沉积装置时,自然氧化层部分恢复。为了防止纳米层的金属化,未对触点进行退火。因此,在界面处出现了肖特基势垒,并保留了残留的氧化层。然而,电流-电压特性表明,形成的接触主要是欧姆的。高浓度的离子诱导缺陷从根本上降低了肖特基势垒的宽度,并保证了半导体价带的空穴和电子分别沿正向和反向穿过势垒。研究表明,离子轰击p-GaAs半导体表面可以在不退火的情况下获得与任何金属的欧姆接触。结果表明,离子激发的半导体修饰和退火的排除使得极薄的p-GaAs纳米层与天然氧化残余层的隧道欧姆接触成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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