Investigation of High-Intensity Implantation of Titanium Ions into Silicon under Conditions of Beam Energy Impact on the Surface

Abstract

Methods of modifying surface and near-surface layers of materials and coatings by ion beams can be applied in many fields of science and technology. To practically implement the technologies for the targeted improvement of the performance properties of parts and products for various purposes, it is of great interest to develop the methods of deep ion doping of near-surface layers of semiconductor materials, as well as metals and alloys due to the enhancement of radiation-stimulated diffusion under conditions when the irradiated sample deep layers are not subject to a significant temperature impact. This study concerns features and regularities of implementing the synergy of high-intensity titanium ion implantation at current densities of several hundred mA/cm² with simultaneous energy impact of a submillisecond ion beam with a power density reaching several tens of kW/cm² on the surface. This work is the first to show that the synergy of high-intensity ion implantation and the energy impact of a high-power density ion beam, taking titanium implantation into silicon as an example, provides the possibility of increasing the ion doping depth from fractions of μm to 6 μm by increasing the irradiation time from 0.5 to 60 min.