Structural, optical and dielectric properties of green synthesized Ag2S nanoparticles

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-17 DOI:10.1007/s10854-024-14071-5

Krishna Gopal Mondal, Soumen Rakshit, Bappa Sona Kar, Satyajit Saha, Paresh Chandra Jana, Makhanlal Nanda Goswami, Debabrata Maji, Jatindranath Mirda

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引用次数: 0

Abstract

A facile, convenient, environment friendly green synthesis method has been used to synthesize Ag₂S nanoparticles (NPs) using lemon extract. The various characterizations such as XRD, FESEM, FTIR and UV–Vis absorption spectrum confirm the good quality of nanosized Ag₂S particles. The temperature and frequency dependent dielectric properties have been studied to investigate the electric behaviour of Ag₂S NPs. A relaxation peak observed in loss tangent vs. frequency plot and it shifted towards higher frequency with increasing temperature. The variation of AC conductivity with frequency reveals that at lower frequency region obeys Jonsher’s Power Law (JPL) and Super-linear Power Law (SPL) at higher frequency region. Non-overlapping Small Polaron Tunnelling (NSPT) model is used to clarify the conduction process of JPL portion of the curve. The Nyquist plot of the sample has demonstrated two semi-circular arches, which suggests the effect of grain and grain boundary resistance in the Ag₂S NPs. The grain and grain boundary resistance decrease with increasing temperature, which indicates the Negative Temperature Coefficient of Resistance (NTCR) behaviour like a semiconductor. The activation energy (E_a) has been estimated from the temperature dependent AC conductivity measurement. The P-E hysteresis loop measurement of Ag₂S NPs shows the relaxor-ferroelectric behaviour at room temperature. The fabrication of p–n junction diode (Ag₂S/Si) has been constructed and demonstrated the diode characteristics for the device applications.

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绿色合成的 Ag2S 纳米粒子的结构、光学和介电性能

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.