Fabrication and characterization of self-powered SnO2/CdTe1-xSex/CdTe photodetectors

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Salih Yılmaz, Bülent M. Başol, İsmail Polat, Tayfur Küçükömeroğlu, Emin Bacaksız
{"title":"Fabrication and characterization of self-powered SnO2/CdTe1-xSex/CdTe photodetectors","authors":"Salih Yılmaz,&nbsp;Bülent M. Başol,&nbsp;İsmail Polat,&nbsp;Tayfur Küçükömeroğlu,&nbsp;Emin Bacaksız","doi":"10.1007/s10854-024-14076-0","DOIUrl":null,"url":null,"abstract":"<div><p>This study presents the self-powered photodetector capabilities of fluorinated tin oxide (FTO)/CdTe₁₋ₓSeₓ/CdTe heterostructures with Se compositions of x = 0.26 and x = 0.39. Structural analysis revealed that substituting Se atoms into Te sites reduced the unit cell volume, indicating successful incorporation. Scanning Electron Microscopy (SEM) analysis demonstrated a significant reduction in surface feature size with increasing Se content, particularly at x = 0.39. Band gap determination via Tauc plot extrapolation showed a band gap of 1.46 eV for CdTe₁₋ₓSeₓ with x = 0.26, which further decreased to 1.38 eV for x = 0.39. Under illumination from blue, green, and red lights at zero bias, the heterostructures exhibited photovoltaic behavior, confirming their potential use as self-powered photodetectors (PDs). Key performance metrics at zero bias for the FTO/CdTe₁₋ₓSeₓ/CdTe device included a responsivity (R) of 0.006 A/W, detectivity (D*) of 1.1 × 10⁸ Jones, and external quantum efficiency (EQE) of 1.8%, along with the rise and fall times of 17 ms and 21 ms, respectively. Applying an external bias further enhanced these metrics, with the highest R of 2.301 A/W and EQE of 645.3% observed for the x = 0.26 sample at 1 V. Notably, the device with x = 0.39 achieved the highest D* of 2.2 × 10⁹ Jones at 1 V. In conclusion, this work highlighted the potential of FTO/CdTe₁₋ₓSeₓ/CdTe heterostructures as highly efficient and versatile photodetectors, capable of functioning both with and without an external power source, making them promising candidates for next-generation optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14076-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This study presents the self-powered photodetector capabilities of fluorinated tin oxide (FTO)/CdTe₁₋ₓSeₓ/CdTe heterostructures with Se compositions of x = 0.26 and x = 0.39. Structural analysis revealed that substituting Se atoms into Te sites reduced the unit cell volume, indicating successful incorporation. Scanning Electron Microscopy (SEM) analysis demonstrated a significant reduction in surface feature size with increasing Se content, particularly at x = 0.39. Band gap determination via Tauc plot extrapolation showed a band gap of 1.46 eV for CdTe₁₋ₓSeₓ with x = 0.26, which further decreased to 1.38 eV for x = 0.39. Under illumination from blue, green, and red lights at zero bias, the heterostructures exhibited photovoltaic behavior, confirming their potential use as self-powered photodetectors (PDs). Key performance metrics at zero bias for the FTO/CdTe₁₋ₓSeₓ/CdTe device included a responsivity (R) of 0.006 A/W, detectivity (D*) of 1.1 × 10⁸ Jones, and external quantum efficiency (EQE) of 1.8%, along with the rise and fall times of 17 ms and 21 ms, respectively. Applying an external bias further enhanced these metrics, with the highest R of 2.301 A/W and EQE of 645.3% observed for the x = 0.26 sample at 1 V. Notably, the device with x = 0.39 achieved the highest D* of 2.2 × 10⁹ Jones at 1 V. In conclusion, this work highlighted the potential of FTO/CdTe₁₋ₓSeₓ/CdTe heterostructures as highly efficient and versatile photodetectors, capable of functioning both with and without an external power source, making them promising candidates for next-generation optoelectronic applications.

自供电 SnO2/CdTe1-xSex/CdTe 光电探测器的制作和特性分析
本研究介绍了含硒量为x = 0.26和x = 0.39的氟化氧化锡(FTO)/CdTe₁ⅹₓSeₓ/CdTe异质结构的自供电光电探测器能力。结构分析表明,将Se原子替换为Te位点减少了单位细胞体积,表明成功结合。扫描电镜(SEM)分析表明,随着硒含量的增加,表面特征尺寸显著减小,特别是在x = 0.39时。通过Tauc图外推法测定带隙显示,当x = 0.26时,CdTe₁ₓSeₓ的带隙为1.46 eV,当x = 0.39时,带隙进一步降低至1.38 eV。在蓝光、绿光和红光的零偏照射下,异质结构表现出光电行为,证实了它们作为自供电光电探测器(pd)的潜在用途。FTO/CdTe₁ₓSeₓ/CdTe器件在零偏置下的关键性能指标包括响应率(R)为0.006 a /W,探测率(D*)为1.1 × 10⁸Jones,外量子效率(EQE)为1.8%,上升和下降时间分别为17 ms和21 ms。施加外部偏置进一步增强了这些指标,对于x = 0.26的样品,在1 V下观察到的最高R为2.301 A/W, EQE为645.3%。值得注意的是,x = 0.39的器件在1 V时获得了最高的D*,为2.2 × 10⁹Jones。总之,这项工作强调了FTO/CdTe 1₁ₓSeₓ/CdTe异质结构作为高效和多功能光电探测器的潜力,能够在有和没有外部电源的情况下工作,使其成为下一代光电应用的有希望的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信