{"title":"Analysis of the physical properties of MgB2 superconductor with Zn(NO3)2·6H2O addition","authors":"Naki Kaya","doi":"10.1007/s10854-024-14069-z","DOIUrl":null,"url":null,"abstract":"<div><p>MgB<sub>2</sub> superconductors in the form of tablets doped with Zn(NO<sub>3</sub>)<sub>2</sub>·6H<sub>2</sub>O at different ratios (0–1–2–3% and 4%) by mass were produced in this study. The crystallographic, mechanical, electrical and magnetic properties of the obtained samples were investigated. For this purpose, X-ray diffraction analysis (XRD), microhardness analysis, temperature-dependent electrical resistance measurement (R-T), and magnetic moment change measurement depending on the magnetic field (m-H) were performed on the samples. The critical current densities (J<sub>c</sub>) of the samples were calculated using the Bean Method and the J<sub>c</sub>-H graph was created. Microhardness analysis was performed using the Vickers Method. Through the Vickers Method, Meyer’s Law, Proportional Sample Resistance (PSR) Model, Elastic/Plastic Deformation (EPD) Model and Indentation-Induced Cracking (IIC) Model were used from microhardness modeling. In the analyses, it was determined that plane peaks belonging to MgB<sub>2</sub> were seen in all samples, the critical transition temperature (T<sub>c</sub>) decreased depending on the increase in the doping ratio from 37.55 to 34.27 K, and there were widenings in the m-H curves. An increase in the J<sub>c</sub> value at 0.32 T, depending on the doping ratio of Zn(NO<sub>3</sub>)<sub>2</sub>·6H<sub>2</sub>O, was observed from 3.01 × 10<sup>1</sup> to 3.23 × 10<sup>3</sup> A/cm<sup>2</sup>. It was also observed that all samples exhibited the reverse indentation size effect (RISE) behavior, and the samples became softer with the doping ratio.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 1","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14069-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
MgB2 superconductors in the form of tablets doped with Zn(NO3)2·6H2O at different ratios (0–1–2–3% and 4%) by mass were produced in this study. The crystallographic, mechanical, electrical and magnetic properties of the obtained samples were investigated. For this purpose, X-ray diffraction analysis (XRD), microhardness analysis, temperature-dependent electrical resistance measurement (R-T), and magnetic moment change measurement depending on the magnetic field (m-H) were performed on the samples. The critical current densities (Jc) of the samples were calculated using the Bean Method and the Jc-H graph was created. Microhardness analysis was performed using the Vickers Method. Through the Vickers Method, Meyer’s Law, Proportional Sample Resistance (PSR) Model, Elastic/Plastic Deformation (EPD) Model and Indentation-Induced Cracking (IIC) Model were used from microhardness modeling. In the analyses, it was determined that plane peaks belonging to MgB2 were seen in all samples, the critical transition temperature (Tc) decreased depending on the increase in the doping ratio from 37.55 to 34.27 K, and there were widenings in the m-H curves. An increase in the Jc value at 0.32 T, depending on the doping ratio of Zn(NO3)2·6H2O, was observed from 3.01 × 101 to 3.23 × 103 A/cm2. It was also observed that all samples exhibited the reverse indentation size effect (RISE) behavior, and the samples became softer with the doping ratio.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.