Effect of Doping and Interband Pumping on the Optical Properties of GeSi/Si Quantum Dot Nanostructures for Infrared Detectors

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Ratmir V. Ustimenko*, Maxim Ya. Vinnichenko*, Danila A. Karaulov, Hayk A. Sarkisyan, David B. Hayrapetyan and Dmitry A. Firsov, 
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引用次数: 0

Abstract

Nanostructures with quantum dots based on GeSi solid solution are promising for the development of optoelectronic devices compatible with modern silicon technology. In this paper, we demonstrate the capabilities of such nanostructures for detecting infrared and terahertz radiation. The working spectral range of nanostructures with GeSi/Si QDs is determined by the energy position of hole levels in the QDs, which is calculated using the quantum box model and confirmed by experimentally measuring the spectra of photoinduced intraband absorption of radiation. Using time-resolved spectroscopy, we found the characteristic times that determine the speed of the detection process associated with the processes of capture and recombination of charge carriers.

Abstract Image

掺杂和带间泵浦对红外探测器用GeSi/Si量子点纳米结构光学性能的影响
基于GeSi固溶体的量子点纳米结构是与现代硅技术兼容的光电器件的发展前景。在本文中,我们展示了这种纳米结构检测红外和太赫兹辐射的能力。GeSi/Si量子点纳米结构的工作光谱范围由量子点中空穴能级的能量位置决定,该范围由量子箱模型计算得到,并通过实验测量光致带内辐射吸收光谱得到证实。利用时间分辨光谱,我们发现了决定与电荷载流子捕获和重组过程相关的检测过程速度的特征时间。
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来源期刊
CiteScore
8.30
自引率
3.40%
发文量
1601
期刊介绍: ACS Applied Nano Materials is an interdisciplinary journal publishing original research covering all aspects of engineering, chemistry, physics and biology relevant to applications of nanomaterials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important applications of nanomaterials.
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