Optimization of g-C3N4 Nanostructures by CH2 Introduction and Relay Modification for Photocatalytic Hydrogen Evolution

IF 5.5 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Daopeng Zhong, Xiangchen Jia, Xianxi Zhang, Jinsheng Zhao, Dongting Wang*, Yuzhen Fang*, Zhiliang Zhang, Federico Rosei* and Yong Li*, 
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Abstract

While extensive efforts have focused on increasing the level of photocatalytic hydrogen evolution of the g-C3N4 nanostructure, these approaches are often constrained by the excessive reliance on single-step modification methodologies, which significantly restricts the potential for performance enhancement. Herein, we propose a relay-modification strategy that begins with the occupation of the CH3-induced N defect sites in the g-C3N4 nanostructure with CH2 groups and is followed by the subsequent annealing process in ambient air. Computational modeling and material characterization suggested that the introduced CH2 groups could significantly accelerate change in charge carrier transportation within the g-C3N4, improve visible light absorption, and decrease the adsorption-free energy of hydrogen intermediates. Consequently, the g-C3N4 nanostructure enriched with CH2 groups yielded a hydrogen evolution rate of 9.0 mmol g–1 h–1, which is much higher than that of pristine g-C3N4 (2.3 mmol g–1 h–1). The subsequent relay modification, i.e., calcination treatment, yields an impressive H2 evolution rate of 14.3 mmol g–1 h–1, more than 16 times higher than that of the nonfunctionalized g-C3N4-derived sample and superior to most reported g-C3N4. Experimental characterizations showed that the remarkable hydrogen production activity could be attributed to relay-modification-induced enhanced visible light absorption and improved electron–hole pair separation.

Abstract Image

用CH2引入和接力修饰优化g-C3N4光催化析氢纳米结构
虽然广泛的努力集中在提高g-C3N4纳米结构的光催化析氢水平,但这些方法往往受到过度依赖单步修饰方法的限制,这大大限制了性能增强的潜力。在此,我们提出了一种继电修饰策略,首先用CH2基团占领g-C3N4纳米结构中ch3诱导的N缺陷位点,然后在环境空气中进行后续退火处理。计算模型和材料表征表明,引入CH2基团可以显著加速g-C3N4内部载流子输运的变化,提高可见光吸收,降低氢中间体的无吸附能。因此,富含CH2基团的g-C3N4纳米结构的析氢速率为9.0 mmol g-1 h-1,远高于原始g-C3N4的2.3 mmol g-1 h-1。随后的接力修饰,即煅烧处理,产生了令人印象深刻的氢气析出率14.3 mmol g-1 h-1,比未功能化的g-C3N4衍生样品高16倍以上,优于大多数报道的g-C3N4。实验表征表明,继电修饰导致的显著的产氢活性可归因于增强的可见光吸收和改善的电子-空穴对分离。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
8.30
自引率
3.40%
发文量
1601
期刊介绍: ACS Applied Nano Materials is an interdisciplinary journal publishing original research covering all aspects of engineering, chemistry, physics and biology relevant to applications of nanomaterials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important applications of nanomaterials.
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