Effect of In2Se3 Doping on Crystallization and Electrical Conversion Behavior of Sb Films

Abstract

The impact of doping In₂Se₃ in Sb thin films on the crystal structure and electrical properties was investigated. The results demonstrate that the incorporation of In₂Se₃ enhances the thermal stability and the data retention properties of the film. Moreover, it effectively mitigates resistance drift and elevates the band gap of Sb films. Appropriate doping with In₂Se₃ inhibits grain growth, refines grain size, and facilitates the formation of an In–Sb bond. Additionally, surface roughness is reduced upon introduction of In₂Se₃ into Sb, leading to significantly enhanced adhesion between the film and substrate, thereby improving device reliability.