Synthesis of thermally stable Cu3SbS4 thin films with high charge density: Doping of Sb atoms in hexagonal Cu9S5 close-packed planes

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Liu Xiao, Zhiying Liu, Gang Zhang, liangyi Liu, Wenlin Feng
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引用次数: 0

Abstract

Cu3SbS4 is commonly used as a hole transport layer in heterojunction devices due to its high valence vacancy, which provides a large number of carriers. The preparation of Cu3SbS4 by large-scale dry chemistry is often accompanied by the generation of other copper antimony sulfide ternary phases during the heating process. By exploiting phase transitions in the crystal structure, the synthesis of nanophases can be controlled to improve the properties of the material. Different choices of the main material structure can trigger the evolution of the internal structure of the product material. In the experiment, the fusion of antimony atoms with host Cu9S5 crystals will preferentially produce thermally stable Cu3SbS4. The stepwise synthesis of Cu3SbS4 films from Sb-Cu9S5 stacked films was discovered. The influence of reaction temperatures on crystal structure, surface morphology, chemical composition of the films was investigated, and the optical and electrical properties of the films were analyzed during the alloying process. The pure Cu3SbS4 was obtained by heating and melting Cu9S5 and Sb in a sulphur vapor environment. The Cu3SbS4 films obtained at 450 °C have a forbidden bandwidth of 0.89 eV and a charge density of 1.39 × 1020 cm−3. These findings provide an explanation for the phase transition and morphological changes during the synthesis of copper antimony sulphide and offer a new thinking strategy for the alloying of synthetic ternary copper-based sulphides.

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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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