Jinxin Fu, Changrong Zhou, Jun Chen, Dongyan Yu, Di Wu, Qingning Li, Changlai Yuan, Jiwen Xu, Guanghui Rao
{"title":"Achieving well-balanced performance of d33 and Td in unmodified morphotropic phase boundary BNKT20 ceramics by optimizing phase structure","authors":"Jinxin Fu, Changrong Zhou, Jun Chen, Dongyan Yu, Di Wu, Qingning Li, Changlai Yuan, Jiwen Xu, Guanghui Rao","doi":"10.1007/s10854-024-14054-6","DOIUrl":null,"url":null,"abstract":"<div><p>The incompatibility of the large piezoelectric response (<i>d</i><sub>33</sub>) and high depolarization temperature (<i>T</i><sub>d</sub>) in lead-free piezoelectric ceramics limited their practical applications. The most used modification methods for improving <i>d</i><sub>33</sub> or <i>T</i><sub>d</sub> commonly required a delicate control of complex compositions. Here, a strategy for simply changing the sintering temperature is used to defer the <i>T</i><sub>d</sub> and increase <i>d</i><sub>33</sub> simultaneously. The <i>T</i><sub>d</sub> and <i>d</i><sub>33</sub> of unmodified Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-0.2Bi<sub>0.5</sub>K<sub>0.5</sub>TiO<sub>3</sub> (BNKT20) ceramics increase with increasing sintering temperature until both of them reach the maximum (<i>d</i><sub>33</sub> ~ 174pC/N, <i>T</i><sub>d</sub> ~ 177 °C) at the sintering temperature of 1100 °C. In-depth analysis unveils the critical role of multiphase coexistence and oxygen vacancies in enhancing <i>T</i><sub>d</sub> by optimizing sintering temperature. Meanwhile, increasing sintering temperature promotes large grain size with easy domain orientation, thus, yielding the improved <i>d</i><sub>33</sub>. This work provides a simple and effective method to broaden the working range of Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-based (BNT) piezoelectric ceramics at high temperature under the premise of realizing high piezoelectric properties.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 36","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14054-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The incompatibility of the large piezoelectric response (d33) and high depolarization temperature (Td) in lead-free piezoelectric ceramics limited their practical applications. The most used modification methods for improving d33 or Td commonly required a delicate control of complex compositions. Here, a strategy for simply changing the sintering temperature is used to defer the Td and increase d33 simultaneously. The Td and d33 of unmodified Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3 (BNKT20) ceramics increase with increasing sintering temperature until both of them reach the maximum (d33 ~ 174pC/N, Td ~ 177 °C) at the sintering temperature of 1100 °C. In-depth analysis unveils the critical role of multiphase coexistence and oxygen vacancies in enhancing Td by optimizing sintering temperature. Meanwhile, increasing sintering temperature promotes large grain size with easy domain orientation, thus, yielding the improved d33. This work provides a simple and effective method to broaden the working range of Bi0.5Na0.5TiO3-based (BNT) piezoelectric ceramics at high temperature under the premise of realizing high piezoelectric properties.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.