Achieving well-balanced performance of d33 and Td in unmodified morphotropic phase boundary BNKT20 ceramics by optimizing phase structure

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jinxin Fu, Changrong Zhou, Jun Chen, Dongyan Yu, Di Wu, Qingning Li, Changlai Yuan, Jiwen Xu, Guanghui Rao
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引用次数: 0

Abstract

The incompatibility of the large piezoelectric response (d33) and high depolarization temperature (Td) in lead-free piezoelectric ceramics limited their practical applications. The most used modification methods for improving d33 or Td commonly required a delicate control of complex compositions. Here, a strategy for simply changing the sintering temperature is used to defer the Td and increase d33 simultaneously. The Td and d33 of unmodified Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3 (BNKT20) ceramics increase with increasing sintering temperature until both of them reach the maximum (d33 ~ 174pC/N, Td ~ 177 °C) at the sintering temperature of 1100 °C. In-depth analysis unveils the critical role of multiphase coexistence and oxygen vacancies in enhancing Td by optimizing sintering temperature. Meanwhile, increasing sintering temperature promotes large grain size with easy domain orientation, thus, yielding the improved d33. This work provides a simple and effective method to broaden the working range of Bi0.5Na0.5TiO3-based (BNT) piezoelectric ceramics at high temperature under the premise of realizing high piezoelectric properties.

通过优化相结构,使d33和Td在未改性的致形相界BNKT20陶瓷中达到良好的平衡性能
无铅压电陶瓷的大压电响应(d33)与高退极化温度(Td)的不兼容性限制了其实际应用。用于改善d33或Td的最常用的修饰方法通常需要对复杂成分进行精细控制。本文采用简单改变烧结温度的策略,同时延缓Td和提高d33。未改性Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3 (BNKT20)陶瓷的Td和d33随烧结温度的升高而增大,在1100℃烧结时达到最大值(d33 ~ 174pC/N, Td ~ 177℃)。深入分析揭示了多相共存和氧空位在优化烧结温度提高Td中的关键作用。同时,提高烧结温度,晶粒尺寸增大,易于畴取向,从而得到改进的d33。本工作为在实现高压电性能的前提下,拓宽bi0.5 na0.5 tio3基(BNT)压电陶瓷在高温下的工作范围提供了一种简单有效的方法。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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阿拉丁
K2CO3
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TiO2
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Na2CO3
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Bi2O3
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