{"title":"First-principles study on structural and electronic properties of Er-doped dysprosium orthovanadate oxide","authors":"Rachana Sain, Chandan Upadhyay","doi":"10.1007/s12034-024-03363-5","DOIUrl":null,"url":null,"abstract":"<div><p>Comprehensive structural and electronic properties of zircon-type ternary-metal oxide, dysprosium orthovanadate, doped with varying concentrations of Er have been investigated using first-principles density functional theory (DFT). Furthermore, the significance of substitutional site doping has been elucidated, revealing that Er incorporation can profoundly alter the structural and electronic characteristics of DyVO<sub>4</sub>. Replacing Er atoms with Dy atoms through substitutional doping reduces the band gap to 2.79 eV compared to the pure zircon-type dysprosium vanadate oxide’s band gap value of 2.87 eV. Cohesive energy of Er-doped DyVO<sub>4</sub> oxide has also been computed at the <i>ab initio</i> level of calculation. Partial density of states’ (PDOS) calculations of all configurations, suggest that the doping element Er exhibits favourable chemical interactions with the host metal oxide, DyVO<sub>4</sub>. Electronic bands near the zero-energy or Fermi level strongly originate from the molecular orbitals of O, V and Dy atoms. Still, we have found that cation substitution at Dy ions’ site largely influences these electronic states and decreases band gap energy value. Consequently, by adjusting concentration of the dopant, the band gap of DyVO<sub>4</sub> oxide can be finely tuned to achieve specific desired levels, which is suitable for electronic applications.</p></div>","PeriodicalId":502,"journal":{"name":"Bulletin of Materials Science","volume":"48 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12034-024-03363-5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Comprehensive structural and electronic properties of zircon-type ternary-metal oxide, dysprosium orthovanadate, doped with varying concentrations of Er have been investigated using first-principles density functional theory (DFT). Furthermore, the significance of substitutional site doping has been elucidated, revealing that Er incorporation can profoundly alter the structural and electronic characteristics of DyVO4. Replacing Er atoms with Dy atoms through substitutional doping reduces the band gap to 2.79 eV compared to the pure zircon-type dysprosium vanadate oxide’s band gap value of 2.87 eV. Cohesive energy of Er-doped DyVO4 oxide has also been computed at the ab initio level of calculation. Partial density of states’ (PDOS) calculations of all configurations, suggest that the doping element Er exhibits favourable chemical interactions with the host metal oxide, DyVO4. Electronic bands near the zero-energy or Fermi level strongly originate from the molecular orbitals of O, V and Dy atoms. Still, we have found that cation substitution at Dy ions’ site largely influences these electronic states and decreases band gap energy value. Consequently, by adjusting concentration of the dopant, the band gap of DyVO4 oxide can be finely tuned to achieve specific desired levels, which is suitable for electronic applications.
利用第一原理密度泛函理论(DFT)研究了掺杂不同浓度铒的锆型三元金属氧化物--正钒酸镝的全面结构和电子特性。此外,研究还阐明了置换位点掺杂的重要性,揭示了掺入铒元素可深刻改变 DyVO4 的结构和电子特性。与纯锆型钒酸镝氧化物的带隙值 2.87 eV 相比,通过取代性掺杂用镝原子取代铒原子可将带隙降至 2.79 eV。掺铒的 DyVO4 氧化物的内聚能也是在 ab initio 计算水平上计算得出的。对所有构型的部分状态密度(PDOS)计算表明,掺杂元素 Er 与主金属氧化物 DyVO4 具有有利的化学相互作用。零能级或费米级附近的电子带主要来自 O、V 和 Dy 原子的分子轨道。但我们发现,Dy 离子位点上的阳离子置换在很大程度上影响了这些电子态,并降低了带隙能值。因此,通过调整掺杂剂的浓度,可以对 DyVO4 氧化物的带隙进行微调,以达到特定的理想水平,从而适用于电子应用。
期刊介绍:
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.