T. M. Razykov, К. M. Kuchkarov, M. S. Tivanov, L. S. Lyashenko, D. Z. Isakov, R. R. Khurramov, Z. Makhmudov, A. N. Olimov, M. Pirimmetov, P. A. Sivtsova, R. T. Yuldoshov, L. Schmidt-Mende, K. F. Shakhriev, Sh. B. Utamuradova, J. G. Bekmirzoyev
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引用次数: 0
Abstract
In this work, SbxSy thin films were grown on glass substrates for the first time using the chemical molecular beam deposition method in the atmospheric pressure hydrogen flow. The structural, morphological and optical properties of SbxSy thin films grown at different substrate temperatures of 300 °C, 350 °C, 400 °C and 450 °C were studied. XRD results showed that the SbxSy thin films grown at different substrate temperatures have an orthorhombic crystal structure. Phase analysis indicated a weakening of Sb-S bonds with increasing substrate temperature. Also, the grain sizes of all obtained thin films ranged from 0.5 to 3 µm. The increase in temperature caused the grains to grow and the spaces between them to increase. Optical experiments reveal that as the substrate temperature increases, the optical band gap energy of the films increases from 1.52 eV to 1.73 eV, as well as an increase in the Urbach energy from 0.11 eV to 0.44 eV. The experimental values of the band gap for Sb2S3 films are near the optimum value for photovoltaic conversion.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.