The current–voltage (I–V) characteristics and low–high impedance measurements (C/G–V) of Au/(AgCdS:PVP)/n-Si Schottky diode (SD) at dark and under illumination conditions

Abstract

In this study, Schottky diode (SD) with a structure of Au/(AgCdS:PVP)/n-Si has been fabricated and then its electrical parameters and conduction mechanisms (CMs) investigated by measuring current–voltage (I–V) and capacitance/conductance–voltage (C/G–V) data in dark and under 100-mW cm⁻² illumination intensity at room temperature (RT). These measurements show that almost all basic electrical parameters and CM depend on illumination, frequency, and voltage. The energy/voltage-dependent profile of surface states (N_ss) was extracted from the forward bias I–V data considering voltage dependence of ideality factor (n), barrier height, and low/high-frequency capacitance model. The density of doping atoms (N_d), barrier height (Φ_B(C–V)), and the width of depletion region (W_d) were also computed by the linear zone of the reverse bias C⁻²–V plot at a frequency of 1 MHz, and the dark conditions. The maximum photosensitivity and photoresponsivity were found as 384 and 7.5 mW A⁻¹ under 100 mW cm⁻², respectively. Based on the experimental findings, the Au/(AgCdS:PVP)/n-Si SD has good rectifier and photodiode behavior and hence, it can be successfully used in electronic and optoelectronic applications rather than conventional metal–semiconductor (MS)-type SD with/without an insulator layer grown by traditional techniques considering the advantages of polymers, such as high mechanical strength, low-cost production, and low energy consumption.