Corrigendum to “Performance enhancement of MOCVD grown Zn-doped β-Ga2O3 deep-ultraviolet photodetectors on silicon substrates via TiN buffer layers” [J. Appl. Surf. Sci. 681 (2025) 161509]

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Applied Surface Science Pub Date : 2024-12-13 DOI:10.1016/j.apsusc.2024.162077

Anoop Kumar Singh, Jun-Hong Shen, Shiming Huang, Chao-Chun Yen, Hsin-Yu Chou, Wei-Hsiang Chiang, Bharath Kumar Yadlapalli, Chiung-Yi Huang, Po-Liang Liu, Ray-Hua Horng, Dong-Sing Wuu

引用次数: 0

Abstract

The authors regret the error in listing one of the author’s name (Po-Liang Liu) and his affiliation. The correct information of Po-Liang Liu is updated as above.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.