Unveiling the phases of bulk ZrTe5through magnetotransport phenomena.

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Pi-Ju Shih, Cheng-Hsueh Yang, Pin-Chi Liao, Wei-Chen Lin, Fa-Hua Chen, Jeng-Chung Chen, Limin Cao, Chiashain Chuang, Chi-Te Liang
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Abstract

We present a straightforward method which may greatly simplify and lower the threshold for determining the phase of the relatively enigmatic quantum material-ZrTe5. In this study, without directly probing the band structure, we identify the topological phase of the three-dimensional (3D) bulk ZrTe5crystal solely through low-temperature electrical and magnetotransport measurements. A two-dimensional (2D) weak antilocalization (WAL) effect was observed in our bulk ZrTe5crystal, along with clear Shubnikov-de Haas oscillations. The large prefactorαderived from WAL analyses indicates the presence of multiple conducting channels in the bulk ZrTe5crystal, where each channel is associated with individual 2D ZrTe5layers. It is the largeαvalue provides insights into the topological Dirac semimetal phase inherent to our ZrTe5crystal. Additionally, we analyze the pronounced linear magnetoresistance and saturation behavior under a perpendicular magnetic field. Our results suggest that bulk ZrTe5crystals, which exhibit unique layered transport features, serve as a promising platform for further research in quantum phases and transitions in 3D quantum systems.

通过磁输运现象揭示zrte5体相。
我们提出了一种简单的方法,可以大大简化和降低确定相对神秘的量子材料zrte5的相位阈值。在这项研究中,我们没有直接探测带结构,我们仅仅通过低温电和磁输运测量来识别三维(3D)块状zrte5晶体的拓扑相。在我们的zrte5晶体中观察到二维(2D)弱反局域化(WAL)效应,以及清晰的舒布尼科夫-德哈斯振荡。从WAL分析中得到的大前因子α表明,在大块zrte5晶体中存在多个导电通道,其中每个通道与单个二维zrte5层相关联。大α值提供了对我们的zrte5晶体固有的拓扑狄拉克半金属相的见解。此外,我们还分析了垂直磁场下明显的线性磁阻和饱和行为。我们的研究结果表明,具有独特分层输运特征的大块zrte5晶体为进一步研究三维量子系统中的量子相和跃迁提供了一个有前途的平台。
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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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