Dual relaxation behaviors driven by a homogeneous and stable dual-interface charge layer based on an EGaIn absorber†

IF 12.2 2区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Geng Chen, Tao Zhang, Limin Zhang, Kai Tao, Qiang Chen and Hongjing Wu
{"title":"Dual relaxation behaviors driven by a homogeneous and stable dual-interface charge layer based on an EGaIn absorber†","authors":"Geng Chen, Tao Zhang, Limin Zhang, Kai Tao, Qiang Chen and Hongjing Wu","doi":"10.1039/D4MH01564A","DOIUrl":null,"url":null,"abstract":"<p >Interface engineering, by modulating defect distribution and impedance at interfaces and inducing interfacial polarization, has proven to be an effective strategy for optimizing dielectric properties. However, the inherent incompatibility between heterogeneous phases presents a significant challenge in constructing multi-heterointerfaces and understanding how their distribution influences dielectric performance. Herein, we constructed an EGaIn@Ni/NiO/Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> composite structure by employing a low-intensity ultrasound-assisted galvanic replacement reaction followed by high-temperature annealing. The controlled addition of Ni salts allowed for the fine-tuning of Ni, NiO, and In concentrations and their spatial distribution within the interfacial architecture. Annealing treatment induced a transition from amorphous to crystalline phases, triggering dual relaxation behaviors between EGaIn/Ni and NiO/Ga<small><sub>2</sub></small>O<small><sub>3</sub></small>. Additionally, significant charge accumulation was observed at the NiO/Ga<small><sub>2</sub></small>O<small><sub>3</sub></small> interface, likely due to the substantial work function difference between Ni and NiO, coupled with the low barrier height between EGaIn and Ni, which facilitates electron migration. Consequently, the optimized samples exhibited a maximum absorption bandwidth of 7.92 GHz, which is the highest among the EGaIn-based absorbers reported in the literature. This work not only elucidates the mechanism by which multi-heterogeneous interfacial distributions regulate the dielectric properties but also provides an effective approach for modulating the electromagnetic wave performance of liquid metals.</p>","PeriodicalId":87,"journal":{"name":"Materials Horizons","volume":" 5","pages":" 1629-1639"},"PeriodicalIF":12.2000,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Horizons","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/mh/d4mh01564a","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Interface engineering, by modulating defect distribution and impedance at interfaces and inducing interfacial polarization, has proven to be an effective strategy for optimizing dielectric properties. However, the inherent incompatibility between heterogeneous phases presents a significant challenge in constructing multi-heterointerfaces and understanding how their distribution influences dielectric performance. Herein, we constructed an EGaIn@Ni/NiO/Ga2O3 composite structure by employing a low-intensity ultrasound-assisted galvanic replacement reaction followed by high-temperature annealing. The controlled addition of Ni salts allowed for the fine-tuning of Ni, NiO, and In concentrations and their spatial distribution within the interfacial architecture. Annealing treatment induced a transition from amorphous to crystalline phases, triggering dual relaxation behaviors between EGaIn/Ni and NiO/Ga2O3. Additionally, significant charge accumulation was observed at the NiO/Ga2O3 interface, likely due to the substantial work function difference between Ni and NiO, coupled with the low barrier height between EGaIn and Ni, which facilitates electron migration. Consequently, the optimized samples exhibited a maximum absorption bandwidth of 7.92 GHz, which is the highest among the EGaIn-based absorbers reported in the literature. This work not only elucidates the mechanism by which multi-heterogeneous interfacial distributions regulate the dielectric properties but also provides an effective approach for modulating the electromagnetic wave performance of liquid metals.

Abstract Image

基于EGaIn吸收体的均匀稳定双界面电荷层驱动的双弛豫行为。
界面工程通过调制界面处的缺陷分布和阻抗以及诱导界面极化,已被证明是优化介电性能的有效策略。然而,非均相之间固有的不相容性给构建多异质界面和理解它们的分布如何影响介电性能带来了重大挑战。本文通过低强度超声辅助电替换反应和高温退火,构建了EGaIn@Ni/NiO/Ga2O3复合结构。Ni盐的可控添加可以对Ni、NiO和In的浓度及其在界面结构中的空间分布进行微调。退火处理诱导了EGaIn/Ni和NiO/Ga2O3从非晶相到晶相的转变,引发了EGaIn/Ni和NiO/Ga2O3之间的双重松弛行为。此外,在NiO/Ga2O3界面处观察到明显的电荷积累,这可能是由于Ni和NiO之间的功函数差异很大,加上EGaIn和Ni之间的低势垒高度,这有利于电子迁移。结果表明,优化后的样品的最大吸收带宽为7.92 GHz,是文献报道的egain基吸收剂中最高的。这项工作不仅阐明了多非均质界面分布调节介质介电性能的机理,而且为调制液态金属的电磁波性能提供了一种有效的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Horizons
Materials Horizons CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
18.90
自引率
2.30%
发文量
306
审稿时长
1.3 months
期刊介绍: Materials Horizons is a leading journal in materials science that focuses on publishing exceptionally high-quality and innovative research. The journal prioritizes original research that introduces new concepts or ways of thinking, rather than solely reporting technological advancements. However, groundbreaking articles featuring record-breaking material performance may also be published. To be considered for publication, the work must be of significant interest to our community-spanning readership. Starting from 2021, all articles published in Materials Horizons will be indexed in MEDLINE©. The journal publishes various types of articles, including Communications, Reviews, Opinion pieces, Focus articles, and Comments. It serves as a core journal for researchers from academia, government, and industry across all areas of materials research. Materials Horizons is a Transformative Journal and compliant with Plan S. It has an impact factor of 13.3 and is indexed in MEDLINE.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信