Effect of Sb doping on the structural, microstructural, and magnetic properties of TiO2 thin films for sensor applications using evaporation technique

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Toufik Hafs, Ali Hafs, Djamel Berdjane, Ramazan Ayaz, Amel Bendjama, Nesrine Hasnaoui
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Abstract

Undoped and Sb-doped TiO2 thin films were synthesized via thermal evaporation and deposited on glass substrates, with Sb concentrations of 2, 4, and 6 wt.% in the MECA2000 evaporator. The structural, microstructural and magnetic properties of films with varying antimony doping concentrations (0, 2, 4, and 6 wt.%) were analyzed using X-ray diffraction with the MAUD program based on the Rietveld method and vibrating sample magnetometry (VSM). X-ray diffraction (XRD) shows that the undoped product corresponds to the anatase phase of TiO2 and remains free from contamination even after adding 2% by weight of the impurity Sb. However, at higher Sb concentrations of 4 and 6% by weight, a phase transition occurs from anatase to rutile. The vibrating sample magnetometer results indicate that the undoped TiO2 thin film displays ferromagnetic behavior at room temperature, with a saturated magnetic moment (Ms) of 0.71 × 10–3 emu. Antimony doping at 2, 4, and 6 wt% enhances Ms to 1.24 × 10–3, 1.47 × 10–3, and 1.68 × 10–3 emu, respectively.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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