{"title":"Mid-Infrared on-Chip Soliton Self-frequency Shift in Chalcogenide Glass Waveguide","authors":"Lei Yang, Zibo Wei, Kai Xia, Zhen Yang, Haoxian Wang, Peilong Yang, Wei Zhang, Rongping Wang, Shixun Dai, Fuwan Gan, Zhe Kang, Peipeng Xu","doi":"10.1002/lpor.202401435","DOIUrl":null,"url":null,"abstract":"Mid-infrared soliton lasers leveraging the Raman self-pumping induced soliton self-frequency shift (SSFS) effect offer continuously tunable, highly efficient, femtosecond coherent sources that are essential for applications such as spectroscopy, metrology, and quantum optics. However, despite significant advancements in fluoride and chalcogenide fiber platforms, realizing mid-infrared Raman soliton lasers on on-chip platforms remains challenging. In this study, the first experimental demonstration of a mid-infrared Raman soliton laser in an on-chip Ge<sub>28</sub>Sb<sub>12</sub>Se<sub>60</sub> (GeSbSe) chalcogenide glass waveguide is presented. A fully fiberized femtosecond fiber laser, centered at 1.96 µm and emitting 246 fs pulses at a 50 MHz repetition rate, is utilized as the pump source, establishing a fiber-to-chip configuration. The waveguides are meticulously fabricated using e-beam lithography and plasma etching, achieving high optical quality and precision in the mid-infrared regime. Through precise geometrical dispersion engineering, a Raman soliton laser is achieved that continuously tunes from 1960 to 2145 nm within a 32.5 mm long snakelike GeSbSe strip waveguide. The threshold for pump peak power is remarkably low, at just 14.1 W (3.47 pJ). Additionally, a more than one-octave-spanning near to mid-infrared supercontinuum (1320–2760 nm at 22.9 pJ), reinforced by the combined Kerr and Raman effects, is also realized, confirming the versatile performance of the proposed GeSbSe waveguide. These findings pave the way for mid-infrared on-chip Raman soliton lasers, highlighting their potential for power-efficient, low-cost, and field-deployable on-chip applications in the mid-infrared regime.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"20 1","pages":""},"PeriodicalIF":9.8000,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Laser & Photonics Reviews","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/lpor.202401435","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Mid-infrared soliton lasers leveraging the Raman self-pumping induced soliton self-frequency shift (SSFS) effect offer continuously tunable, highly efficient, femtosecond coherent sources that are essential for applications such as spectroscopy, metrology, and quantum optics. However, despite significant advancements in fluoride and chalcogenide fiber platforms, realizing mid-infrared Raman soliton lasers on on-chip platforms remains challenging. In this study, the first experimental demonstration of a mid-infrared Raman soliton laser in an on-chip Ge28Sb12Se60 (GeSbSe) chalcogenide glass waveguide is presented. A fully fiberized femtosecond fiber laser, centered at 1.96 µm and emitting 246 fs pulses at a 50 MHz repetition rate, is utilized as the pump source, establishing a fiber-to-chip configuration. The waveguides are meticulously fabricated using e-beam lithography and plasma etching, achieving high optical quality and precision in the mid-infrared regime. Through precise geometrical dispersion engineering, a Raman soliton laser is achieved that continuously tunes from 1960 to 2145 nm within a 32.5 mm long snakelike GeSbSe strip waveguide. The threshold for pump peak power is remarkably low, at just 14.1 W (3.47 pJ). Additionally, a more than one-octave-spanning near to mid-infrared supercontinuum (1320–2760 nm at 22.9 pJ), reinforced by the combined Kerr and Raman effects, is also realized, confirming the versatile performance of the proposed GeSbSe waveguide. These findings pave the way for mid-infrared on-chip Raman soliton lasers, highlighting their potential for power-efficient, low-cost, and field-deployable on-chip applications in the mid-infrared regime.
期刊介绍:
Laser & Photonics Reviews is a reputable journal that publishes high-quality Reviews, original Research Articles, and Perspectives in the field of photonics and optics. It covers both theoretical and experimental aspects, including recent groundbreaking research, specific advancements, and innovative applications.
As evidence of its impact and recognition, Laser & Photonics Reviews boasts a remarkable 2022 Impact Factor of 11.0, according to the Journal Citation Reports from Clarivate Analytics (2023). Moreover, it holds impressive rankings in the InCites Journal Citation Reports: in 2021, it was ranked 6th out of 101 in the field of Optics, 15th out of 161 in Applied Physics, and 12th out of 69 in Condensed Matter Physics.
The journal uses the ISSN numbers 1863-8880 for print and 1863-8899 for online publications.