Photoconductivity modulation behavior based on LiNbO3/graphene heterostructure for ultraviolet detection

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Miaoli Guo, Kaixi Bi, Shuai Zhang, Guangchen Yin, Qiannan Li, Shuqi Han, Liuyu Hou, Shengguo Zhang, Yan Zhuang, Linyu Mei
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引用次数: 0

Abstract

Surface acoustic wave (SAW) technology based on lithium niobate (LiNbO3) piezoelectric crystals has emerged as a powerful tool for investigating the mechanism of acoustoelectric interactions, relatively few attempts have focused on acoustophotoelectric research. Graphene has attracted extensive attention in the field of optical research due to its unique properties such as extremely high carrier mobility and broadband tunability. The LiNbO3/graphene coupling structure based on photoconductor-induced acoustic wave frequency shift is emerging as a novel approach to investigate the acoustophotoelectric response. In this study, we present a hybrid SAW-structure LiNbO3/graphene. Ultraviolet (UV) light is used as an effective strategy to control charge carrier changes in graphene, while the dynamic process is detected using the SAW technology. Results show that the sensitivity of the LiNbO3/graphene SAW device operating at 93 MHz is 4.09 ppm/(mW/cm2). Further, graphene was doped with HAuCl4 solution to enhance its photoelectronic properties, the sensitivity reaches 7.24 ppm/(mW/cm2). The UV sensitivity of the doped LiNbO3/graphene is 1.77 times higher than that of the undoped device. The incorporation of HAuCl4 into graphene leads to multitude effects that collectively enhance photoelectric performance, including modified Fermi-Level, increased charge carrier density. This device structure and research methodology provide significant technical and theoretical support for the development of graphene-based photoelectronic devices based on SAW technology.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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