Enhanced dual frequency microwave absorption performance of magnetic-dielectric multi-interface regulated MWCNTS/MnFe2O4/Fe3O4/Co quaternary nanocomposite

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-09 DOI:10.1007/s10854-024-14006-0

Bahroz Rashid, Zakir Hussain

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Abstract

The present study focuses on the development of radar-absorbing materials (RAM) for electromagnetic interference shielding. Herein, we report on the synthesis of MnFe₂O₄, Fe₃O₄, and cobalt (Co) nanoparticles and their nanocomposites with multi-walled carbon nanotubes (MWCNTs). Characterization techniques including XRD, SEM and VSM were used to confirm the successful formation of nanoparticles and their composites. The nanocomposites showed strong radar absorption properties in the frequency range of 1–20 GHz due to the synergistic effect of MWCNTs and magnetic nanoparticles. Among other nanocomposites, MWCNTs/Fe₃O₄ demonstrated an extremely high electromagnetic wave absorption with a reflection loss min value of − 35.22 dB at 14.2 GHz and RL min of − 16.74 dB at 19.17 GHz. This study offers insights into designing advanced RAM, highlighting potential for next-gen electromagnetic wave absorbers.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.