Structural, optical and magnetic analysis of Zn0.95Ni0.05Se nanoparticles with annealing temperature

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-12-07 DOI:10.1007/s10854-024-13991-6

Sonia Sheokand, Dharamvir Singh Ahlawat, Nitesh Choudhary

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引用次数: 0

Abstract

In the present study, Zn_0.95Ni_0.05Se nanoparticles are synthesized using co-precipitation method. Four samples prepared at different annealing temperatures 200, 400, 600 and 800 °C. Structural properties of Zn_0.95Ni_0.05Se nanoparticles are understood by using XRD (X-ray diffraction) analysis which confirms increment in crystallite size from 8 to 16 nm along with phase transformation from cubic to hexagonal as the annealing temperature increased from 200 to 800 °C. TEM (Transmission electron microscopy) analysis also confirms the formation of nano-size particles in prepared samples. FE-SEM (Field Emission-Scanning Electron Microscope) analysis of nanoparticles has explained morphological behaviour and EDX (Energy-Dispersive X-ray) spectroscopy confirms formation of ZnO nanoparticles at higher temperature. FTIR (Fourier transform infra-red) spectroscopy analysis is confirming the presence of different functional groups in nanoparticles at different annealing temperatures. Optical energy band-gap has decreased from 4.97 to 4.8 eV as annealing temperature increased from 200 to 800 °C due to enhancement in nanoparticles’ size observed by UV–visible spectroscopy. The analysis of magnetic properties of nanoparticles is carried out by using VSM (Vibrating-Sample Magnetometer) with ESR (Electron Spin Resonance) techniques. VSM analysis of these nanoparticles shows ferromagnetic behaviour however as annealing is increased above 400 °C ferromagnetism disappears from Zn_0.95Ni_0.05Se nanoparticles showing diamagnetic properties. These VSM results are also confirmed by ESR observations.

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退火温度下Zn0.95Ni0.05Se纳米粒子的结构、光学和磁性分析

本研究采用共沉淀法合成了Zn0.95Ni0.05Se纳米粒子。在200、400、600和800℃的不同退火温度下制备了四种样品。通过XRD （x射线衍射）分析了解了Zn0.95Ni0.05Se纳米粒子的结构特性，证实了随着退火温度从200℃升高到800℃，晶粒尺寸从8 nm增加到16 nm，相变从立方到六方。TEM（透射电子显微镜）分析也证实了制备样品中纳米级颗粒的形成。FE-SEM（场发射扫描电子显微镜）分析解释了纳米颗粒的形态行为，EDX（能量色散x射线）光谱证实了ZnO纳米颗粒在较高温度下的形成。傅里叶变换红外光谱分析证实了不同退火温度下纳米颗粒中存在不同的官能团。紫外可见光谱观察到，当退火温度从200℃升高到800℃时，纳米颗粒尺寸增大，光能带隙从4.97 eV减小到4.8 eV。采用振动样品磁强计（VSM）和电子自旋共振（ESR）技术对纳米颗粒的磁性进行了分析。在VSM分析中，这些纳米粒子表现出铁磁性，但当退火温度高于400℃时，这些纳米粒子的铁磁性消失，表现出抗磁性。这些VSM结果也被ESR观测证实。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.