Structural, optical and magnetic analysis of Zn0.95Ni0.05Se nanoparticles with annealing temperature

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sonia Sheokand, Dharamvir Singh Ahlawat, Nitesh Choudhary
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引用次数: 0

Abstract

In the present study, Zn0.95Ni0.05Se nanoparticles are synthesized using co-precipitation method. Four samples prepared at different annealing temperatures 200, 400, 600 and 800 °C. Structural properties of Zn0.95Ni0.05Se nanoparticles are understood by using XRD (X-ray diffraction) analysis which confirms increment in crystallite size from 8 to 16 nm along with phase transformation from cubic to hexagonal as the annealing temperature increased from 200 to 800 °C. TEM (Transmission electron microscopy) analysis also confirms the formation of nano-size particles in prepared samples. FE-SEM (Field Emission-Scanning Electron Microscope) analysis of nanoparticles has explained morphological behaviour and EDX (Energy-Dispersive X-ray) spectroscopy confirms formation of ZnO nanoparticles at higher temperature. FTIR (Fourier transform infra-red) spectroscopy analysis is confirming the presence of different functional groups in nanoparticles at different annealing temperatures. Optical energy band-gap has decreased from 4.97 to 4.8 eV as annealing temperature increased from 200 to 800 °C due to enhancement in nanoparticles’ size observed by UV–visible spectroscopy. The analysis of magnetic properties of nanoparticles is carried out by using VSM (Vibrating-Sample Magnetometer) with ESR (Electron Spin Resonance) techniques. VSM analysis of these nanoparticles shows ferromagnetic behaviour however as annealing is increased above 400 °C ferromagnetism disappears from Zn0.95Ni0.05Se nanoparticles showing diamagnetic properties. These VSM results are also confirmed by ESR observations.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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