{"title":"Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering","authors":"Ziyuan Li, Longhai Shen, Ouxiang Zhou, Xiaotian Zhu, Yu Zhang, Quhui Wang, Dongli Qi, Xinglai Zhang, Mengyao Han, Junhao Xu, Ye Chen, Yuhao Li","doi":"10.1007/s10853-024-10434-9","DOIUrl":null,"url":null,"abstract":"<div><p>In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N films with tunable bandgap hold significant potential for photoelectric applications, particularly in wavelength-selective and UV–visible photodetection. Herein, a unique target was designed to prepare bandgap-tunable In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N films by RF (radio frequency) magnetron sputtering. By adjusting the RF power to change the In content (<i>x</i> value), we prepared In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N films with bandgap variations in the range of 2.15–2.63 eV. Upon further investigation, it was found that the grown In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N films had hexagonal structure and did not undergo phase separation in the In-rich composition. With the increase of In content from 0.46 to 0.60, the preferred orientation of the In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N films changed from (101) to (100) plane, while the surface morphology of the In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N films changed from worm-like to spherical grains. Photoluminescence peaks of In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N films was composed of intrinsic and defect luminescence. Under irradiation of 450 and 650 nm laser, the responsivity of the In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N metal–semiconductor-metal photodetector can reach 5.15 × 10<sup>−7</sup> and 3.2 × 10<sup>−7</sup> A/W, and the fastest response time can reach 1.28 and 1.32 s, respectively.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":645,"journal":{"name":"Journal of Materials Science","volume":"59 47","pages":"21828 - 21845"},"PeriodicalIF":3.5000,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10853-024-10434-9","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract
InxGa1-xN films with tunable bandgap hold significant potential for photoelectric applications, particularly in wavelength-selective and UV–visible photodetection. Herein, a unique target was designed to prepare bandgap-tunable InxGa1-xN films by RF (radio frequency) magnetron sputtering. By adjusting the RF power to change the In content (x value), we prepared InxGa1-xN films with bandgap variations in the range of 2.15–2.63 eV. Upon further investigation, it was found that the grown InxGa1-xN films had hexagonal structure and did not undergo phase separation in the In-rich composition. With the increase of In content from 0.46 to 0.60, the preferred orientation of the InxGa1-xN films changed from (101) to (100) plane, while the surface morphology of the InxGa1-xN films changed from worm-like to spherical grains. Photoluminescence peaks of InxGa1-xN films was composed of intrinsic and defect luminescence. Under irradiation of 450 and 650 nm laser, the responsivity of the InxGa1-xN metal–semiconductor-metal photodetector can reach 5.15 × 10−7 and 3.2 × 10−7 A/W, and the fastest response time can reach 1.28 and 1.32 s, respectively.
期刊介绍：
The Journal of Materials Science publishes reviews, full-length papers, and short Communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials. The subjects are seen from international and interdisciplinary perspectives covering areas including metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. The Journal of Materials Science is now firmly established as the leading source of primary communication for scientists investigating the structure and properties of all engineering materials.
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