Effect of B2O3 substitution for Al2O3 on the structure and properties of calcium aluminosilicate glass

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xinjie Qin, Zecong Wei, Zhenhua Fan, Dehua Xiong, Yingxin Wang, Zhou Teng, Jihong Zhang, Jun Xie
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引用次数: 0

Abstract

Calcium aluminosilicate (CaO-Al2O3-SiO2, CAS) glass, with varying B2O3 to Al2O3 substitutions, was prepared using the melting method. The network structure of this CAS glass was analyzed through Raman spectroscopy and nuclear magnetic resonance spectroscopy. The results showed as the B2O3 to Al2O3 substitution increased, the proportion of [BO4] gradually decreased from 57.2 to 41.6%, while the proportion of [BO3] increased from 42.8 to 58.4%. The primary form of Al3+ mainly exists in the glass network structure is [AlO4]. The Qn group is dominated by Q2 (25.6 ~ 35.0%) units and Q3 (51.8 ~ 65.5%) units. As the B2O3 substitution for Al2O3 increased, there was a gradual decrease in Q1 and Q2 units, and a corresponding increase in Q3 units and Q4 units, leading to an increase in the degree of polymerization of glass network structure. However, the substitution also reduced the stability of the glass network structure. While the replacement of Al2O3 by B2O3 diminished the hardness, bending strength, expansion softening temperature and other properties of the glass, it significantly reduced the viscous activation energy, melting temperature, and forming temperature of the glass. These changes have significant implications for practical industrial production.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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