An Artificial Synaptic Devices Based on PbS Nanofilm Photodetectors for Radical Recognition System Application

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhi-Guo Zhu;Jia Liu;Yang Wang;Sheng-Hui Luo;Can Fu;Meng-Fei Liang;Lin-Bao Luo;Feng-Xia Liang
{"title":"An Artificial Synaptic Devices Based on PbS Nanofilm Photodetectors for Radical Recognition System Application","authors":"Zhi-Guo Zhu;Jia Liu;Yang Wang;Sheng-Hui Luo;Can Fu;Meng-Fei Liang;Lin-Bao Luo;Feng-Xia Liang","doi":"10.1109/LSENS.2024.3497148","DOIUrl":null,"url":null,"abstract":"Neuromorphic artificial synaptic devices exhibit significant application in the fields of deep learning and edge computing. In this study, we proposed a PbS film-based artificial synaptic device that features a simple structure and manufacturing process, and is easy to integrate. Under the stimulation of optical signals, the device can simulate the functions of human neural synapses, such as short-term plasticity, excitatory postsynaptic currents (EPSC), and paired pulse facilitation, exhibiting memory capabilities when triggered by consecutive light pulses. We used it for detection of radicals in standard Chinese characters, constructing an automatically controlled recognition system that uses a field-programmable gate array (FPGA) combined with a convolutional neural network (CNN) to accomplish the detection of radicals. A dataset of 1000 samples was established and extended using expansion techniques to prevent overfitting. Using FPGA and ARM combined with a CNN network, we have achieved an accuracy of 96% in detecting radical components. This study suggests that the present nanofilm photodetector with processing performance may find promising application in future pattern recognition.","PeriodicalId":13014,"journal":{"name":"IEEE Sensors Letters","volume":"8 12","pages":"1-4"},"PeriodicalIF":2.2000,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10752366/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Neuromorphic artificial synaptic devices exhibit significant application in the fields of deep learning and edge computing. In this study, we proposed a PbS film-based artificial synaptic device that features a simple structure and manufacturing process, and is easy to integrate. Under the stimulation of optical signals, the device can simulate the functions of human neural synapses, such as short-term plasticity, excitatory postsynaptic currents (EPSC), and paired pulse facilitation, exhibiting memory capabilities when triggered by consecutive light pulses. We used it for detection of radicals in standard Chinese characters, constructing an automatically controlled recognition system that uses a field-programmable gate array (FPGA) combined with a convolutional neural network (CNN) to accomplish the detection of radicals. A dataset of 1000 samples was established and extended using expansion techniques to prevent overfitting. Using FPGA and ARM combined with a CNN network, we have achieved an accuracy of 96% in detecting radical components. This study suggests that the present nanofilm photodetector with processing performance may find promising application in future pattern recognition.
基于PbS纳米膜光电探测器的人工突触器件在自由基识别系统中的应用
神经形态人工突触装置在深度学习和边缘计算领域有着重要的应用。在本研究中,我们提出了一种基于PbS膜的人工突触装置,具有结构简单、制造工艺简单、易于集成的特点。在光信号的刺激下,该装置可以模拟人类神经突触的短期可塑性、兴奋性突触后电流(EPSC)、配对脉冲易化等功能,在连续光脉冲触发下表现出记忆能力。将其应用于标准汉字的词根检测,构建了一套采用现场可编程门阵列(FPGA)和卷积神经网络(CNN)相结合的自动控制识别系统来完成词根检测。建立了1000个样本的数据集,并使用扩展技术进行扩展以防止过拟合。利用FPGA和ARM结合CNN网络,我们对自由基成分的检测准确率达到96%。该研究表明,纳米膜光电探测器具有良好的处理性能,在未来的模式识别中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Sensors Letters
IEEE Sensors Letters Engineering-Electrical and Electronic Engineering
CiteScore
3.50
自引率
7.10%
发文量
194
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