Grazing-incidence small-angle neutron scattering at high pressure (HP-GISANS): a soft matter feasibility study on grafted brush films

IF 5.2 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Apostolos Vagias, Theodore Manouras, Andreas Buchner, Philipp Gutfreund, Lionel Porcar, Mark Jacques, Leonardo Chiappisi, David P. Kosbahn, Marcell Wolf, Laura Guasco, Reiner Dahint, Maria Vamvakaki, Peter Müller-Buschbaum
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引用次数: 0

Abstract

Grazing-incidence small-angle neutron scattering (GISANS) under pressure (HP-GISANS) at the solid (Si)–liquid (D2O) interface is demonstrated for the pressure-induced lateral morphological characterization of the nanostructure in thin (<100 nm) soft matter films. We demonstrate feasibility by investigating a hydrophobic {poly[(2,2,3,3,4,4,5,5-octafluoro)pentyl methacrylate]} (POFPMA)–hydrophilic {poly[2-(dimethylamino)ethyl methacrylate]} (PDMAEMA) brush mixture of strong incompatibility between the homopolymers, anchored on Si, at T = 45°C for two pressures, P = 1 bar and P = 800 bar. Our GISANS results reveal nanostructural rearrangements with increasing P, underlining P-induced effects in tethered polymer brush layers swollen with bulk solvent.

Abstract Image

高压掠入射小角中子散射(HP-GISANS):接枝电刷膜软物质可行性研究
研究了固体(Si) -液体(D2O)界面压力下的擦入射小角中子散射(GISANS) (HP-GISANS)对薄(<100 nm)软物质薄膜中纳米结构的压力诱导侧向形态表征。我们通过研究疏水性{聚[(2,2,3,3,4,4,5,5-八氟)甲基丙烯酸戊酯]}(POFPMA) -亲水性{聚[2-(二甲氨基)甲基丙烯酸乙酯]}(PDMAEMA)刷状混合物来证明其可行性,这些均聚物之间具有很强的不相容性,锚定在Si上,温度为45°C, P = 1 bar和P = 800 bar。我们的GISANS结果显示,随着P的增加,纳米结构重排,强调了P在被大块溶剂膨胀的系留聚合物刷层中引起的效应。
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来源期刊
Journal of Applied Crystallography
Journal of Applied Crystallography CHEMISTRY, MULTIDISCIPLINARYCRYSTALLOGRAPH-CRYSTALLOGRAPHY
CiteScore
7.80
自引率
3.30%
发文量
178
期刊介绍: Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusion-controlled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.
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