Angstrom Scale Ionic Memristors’ Engineering with van der Waals Materials: A Route to Highly Tunable Memory States

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Dhal Biswabhusan, Puzari Animesh, Li-Hsien Yeh, Kalon Gopinadhan
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Abstract

Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite result in highly confined channels of size 3–5 Å. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the overscreening of counterions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion–ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices.

Abstract Image

范德华材料的埃级离子记忆电阻器工程:通往高度可调记忆状态的途径
模拟大脑功能的忆阻器对于节能的神经形态装置至关重要。模拟生物突触的离子通道仍处于发展的早期阶段,特别是记忆状态的可调性。在这里,我们证明了K+, Na+, Ca2+和Al3+等阳离子嵌入蛭石的层间空间导致尺寸为3-5 Å的高度受限通道。它们通过离子交换动力学具有奇异的忆阻器特性,即使在1 m的高盐浓度下也是如此。所观察到的双极忆阻器特性可随频率、几何不对称性、离子浓度和插入物而调节。值得注意的是,我们在两种情况下观察到极化翻转忆阻器的行为:一种是Al3+离子,另一种是几何不对称比大于15的器件。这种反转是由于反离子在通道入口积聚而造成的过筛。我们的研究结果表明,离子交换动力学、离子-离子相互作用和离子积累/耗尽机制,特别是多价离子,可以用来开发先进的忆阻器器件。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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