A zero external magnetic field quantum standard of resistance at the 10−9 level

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-12-04 DOI:10.1038/s41928-024-01295-w

D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer

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Abstract

The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (RK = h/e2, where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 ± 8.7) nΩ Ω−1 when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω−1 when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω−1 level (or 10−9 of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference. Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3 show that the system can provide a zero external magnetic field quantum standard of resistance.

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10−9级的零外磁场电阻量子标准

量子异常霍尔效应在计量学中有潜在的用途，因为它提供了在零外部磁场下的冯克里zing常数（RK = h/e2，其中h是普朗克常数，e是基本电荷）的霍尔电阻量子化的途径。然而，获得这种效果是具有挑战性的，因为它需要低温（通常低于50 mK）和低偏置电流（通常低于1µA）。本文报道了基于v掺杂（Bi,Sb）2Te3磁性拓扑绝缘体的器件在量子反常霍尔效应下的霍尔电阻量子化测量。我们发现，当外置磁场为零时，霍尔电阻与RK的相对偏差为（4.4±8.7）nΩ Ω−1，当外推到零测量电流时，霍尔电阻与RK的相对偏差为（8.6±6.7）nΩ Ω−1，当外推到零纵向电阻率时，霍尔电阻与RK的相对偏差为（k = 1）。这种精度和准确度在nΩ Ω−1级（或相对不确定度的10−9级）达到了相关计量应用所需的阈值，并建立了零外部磁场量子电阻标准，这对于将基于量子的电压和电阻标准集成到单个通用量子电学参考中是必要的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

期刊介绍： Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.