Advancing High-Performance Memristors Enabled by Position-Controlled Grain Boundaries in Controllably Grown Star-Shaped MoS2

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2024-11-22 DOI:10.1021/acs.nanolett.4c0464210.1021/acs.nanolett.4c04642

Shangui Lan, Fangyuan Zheng, Changchun Ding, Yukun Hong, Baoyu Wang, Chenyang Li, Shuqing Li, Hong Yang, Zhili Hu, Baojun Pan, Jian Chai, Yinan Wang, Guiqing Huang, Min Yue, Shun Wang, Lain-Jong Li*, Lijie Zhang* and Peijian Wang*,

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Abstract

Two-dimensional transition metal dichalcogenides are highly promising platforms for memristive switching devices that seamlessly integrate computation and memory. Grain boundaries (GBs), an important micro–nanoscale structure, hold tremendous potential in memristors, but their role remains unclear due to their random distribution, which hinders fabrication. Herein, we present a novel chemical vapor deposition approach to synthesize star-shaped MoS₂ nanoflakes with precisely positioned GBs. This approach enables memristor fabrication at specific locations and notably reduces the average set voltage (16-fold reduction) compared to single-crystalline MoS₂, due to reduced diffusion barriers for metallic ions through GBs, as further validated by theoretical calculations. These findings offer a new method for synthesizing TMDs with controlled GBs for memristor fabrication, highlighting the crucial role of GBs in reducing set voltage and power consumption, advancing memristive switching devices toward applications in integrated computation and memory systems.

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在可控生长的星形二硫化钼中利用位置控制晶界实现高性能忆阻器

二维过渡金属二硫族化合物是非常有前途的记忆开关器件平台，无缝集成计算和存储。晶界（GBs）是一种重要的微纳结构，在忆阻器中具有巨大的潜力，但由于其随机分布，其作用尚不清楚，这阻碍了其制造。在此，我们提出了一种新的化学气相沉积方法来合成具有精确定位的GBs的星形MoS2纳米片。这种方法可以在特定位置制造忆阻器，与单晶MoS2相比，由于金属离子通过gb的扩散屏障减少，因此显著降低了平均设定电压（降低了16倍），理论计算进一步验证了这一点。这些发现为用可控gb合成tmd制造忆阻器提供了一种新方法，突出了gb在降低设定电压和功耗方面的关键作用，推动了忆阻开关器件在集成计算和存储系统中的应用。

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.