Comparative Transmission Electron Microscopy Study of ZnO Nanowire Growth by a Vapor–Solid Method and by Thermal Oxidation during Joule Heating

IF 3.4 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Janghyun Jo*, Rafal E. Dunin-Borkowski, Javier Piqueras, Paloma Fernández Sánchez*, Ana Urbieta, Belén Sotillo and Wolfgang Jäger, 
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Abstract

The microstructure, morphology, and structural quality of ZnO nanowires grown by a vapor–solid (VS) mechanism and by oxidation during Joule heating of Zn wires by a current are compared using high-resolution transmission electron microscopy (TEM) and scanning TEM (STEM). Growth of the nanowires by Joule heating is a rapid process, with times of treatment in the range of seconds or minutes, whereas times for more conventional and widespread VS growth are normally in the range of hours at an elevated temperature. Nanowires grown by the two techniques are shown to have similar morphologies and to be single crystalline. The incorporation of Tb dopants into both kinds of nanowires was investigated by using energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy. In nanowires grown by the VS method, Tb was found to aggregate and form Tb oxide nanoparticles on parts of the nanowire surfaces. In nanowires grown by Joule heating, no segregation of the dopants was observed. These results contribute to the understanding and development of inexpensive Joule synthesis methods for nanowires of ZnO and other oxides.

Advanced (S)TEM measurements revealed that ZnO nanowires grown by conventional vapor−solid mechanism for several hours have single crystalline hexagonal structures with an [0001] growth direction. ZnO nanowires grown by Joule heating by an intense current flow within a few seconds or minutes also have comparable high-quality crystalline structures but with different growth directions and much lower aspect ratio.

焦耳加热过程中气固法和热氧化法生长ZnO纳米线的透射电镜对比研究
采用高分辨率透射电子显微镜(TEM)和扫描电子显微镜(STEM)对气固(VS)机制生长的ZnO纳米线和电流焦耳加热氧化法制备的ZnO纳米线的微观结构、形貌和结构质量进行了比较。焦耳加热纳米线的生长是一个快速的过程,处理时间在几秒或几分钟的范围内,而在高温下,更传统和广泛的VS生长时间通常在几个小时的范围内。用这两种技术生长的纳米线具有相似的形貌和单晶结构。利用能量色散x射线能谱和电子能量损失能谱研究了Tb掺杂剂在两种纳米线中的掺入。在VS法生长的纳米线中,发现Tb在纳米线表面的某些部分聚集并形成氧化Tb纳米颗粒。在焦耳加热生长的纳米线中,没有观察到掺杂剂的偏析。这些结果有助于理解和发展廉价的氧化锌和其他氧化物纳米线的焦耳合成方法。先进的(S)TEM测量表明,通过传统气固机制生长数小时的ZnO纳米线具有单晶六方结构,其生长方向为[0001]。在几秒或几分钟内通过强电流焦耳加热生长的ZnO纳米线也具有类似的高质量晶体结构,但生长方向不同,长径比也低得多。
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来源期刊
Crystal Growth & Design
Crystal Growth & Design 化学-材料科学:综合
CiteScore
6.30
自引率
10.50%
发文量
650
审稿时长
1.9 months
期刊介绍: The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials. Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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