Twin-Free Growth of Ultrathin Bi2Te3 Films on CaF2(111)/Si(111)

IF 3.2 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Shinichiro Hatta*, Shimpei Higaki, Hiroshi Okuyama and Tetsuya Aruga*, 
{"title":"Twin-Free Growth of Ultrathin Bi2Te3 Films on CaF2(111)/Si(111)","authors":"Shinichiro Hatta*,&nbsp;Shimpei Higaki,&nbsp;Hiroshi Okuyama and Tetsuya Aruga*,&nbsp;","doi":"10.1021/acs.cgd.4c0125810.1021/acs.cgd.4c01258","DOIUrl":null,"url":null,"abstract":"<p >The CaF<sub>2</sub>(111) surface has no dangling bond, which allows it to be used as a substrate for the van der Waals epitaxy of layered materials. In addition, a CaF<sub>2</sub>(111) thin film can serve as a crystalline insulating buffer on Si(111) due to good lattice matching. We investigated the heteroepitaxy of topological insulator Bi<sub>2</sub>Te<sub>3</sub> on a CaF<sub>2</sub>(111) thin film by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy, and conductivity measurements. Well-ordered Bi<sub>2</sub>Te<sub>3</sub>(111) films were obtained by molecular beam epitaxy on the substrate at 370 K. As the thickness increased above one quintuple layer (QL), the lateral domain size rapidly increased, and one domain became dominant. The twin-free structure of the 5 QL film was confirmed by the dynamical LEED calculation. The films with thickness above 2 QL exhibited metallic conduction through the surface band and the bulk-like conduction band. The observed rapid increase in conductivity at 4–5 QL is attributed to the thickness limit of the topological surface state.</p>","PeriodicalId":34,"journal":{"name":"Crystal Growth & Design","volume":"24 23","pages":"10038–10045 10038–10045"},"PeriodicalIF":3.2000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Growth & Design","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.cgd.4c01258","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The CaF2(111) surface has no dangling bond, which allows it to be used as a substrate for the van der Waals epitaxy of layered materials. In addition, a CaF2(111) thin film can serve as a crystalline insulating buffer on Si(111) due to good lattice matching. We investigated the heteroepitaxy of topological insulator Bi2Te3 on a CaF2(111) thin film by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy, and conductivity measurements. Well-ordered Bi2Te3(111) films were obtained by molecular beam epitaxy on the substrate at 370 K. As the thickness increased above one quintuple layer (QL), the lateral domain size rapidly increased, and one domain became dominant. The twin-free structure of the 5 QL film was confirmed by the dynamical LEED calculation. The films with thickness above 2 QL exhibited metallic conduction through the surface band and the bulk-like conduction band. The observed rapid increase in conductivity at 4–5 QL is attributed to the thickness limit of the topological surface state.

Abstract Image

CaF2(111)/Si(111)表面无双晶生长超薄Bi2Te3薄膜
CaF2(111)表面没有悬垂键,这使得它可以用作层状材料范德华外延的衬底。此外,由于良好的晶格匹配,CaF2(111)薄膜可以作为Si(111)的晶体绝缘缓冲。我们通过低能电子衍射(LEED)、角分辨光电子能谱和电导率测量研究了拓扑绝缘体Bi2Te3在CaF2(111)薄膜上的异质外延。在370k的温度下,通过分子束外延在衬底上得到了有序的Bi2Te3(111)薄膜。随着厚度在一个五元层(QL)以上的增加,横向畴尺寸迅速增大,并以一个畴为主。通过动态LEED计算证实了5ql膜的无双晶结构。厚度在2ql以上的薄膜通过表面带和块状带表现出金属导电。在4 - 5ql处观察到的电导率的快速增加归因于拓扑表面态的厚度限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Crystal Growth & Design
Crystal Growth & Design 化学-材料科学:综合
CiteScore
6.30
自引率
10.50%
发文量
650
审稿时长
1.9 months
期刊介绍: The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials. Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信