{"title":"Sufficient Hole Injection for High-Performance Blue Perovskite Light-Emitting Diodes","authors":"Ran Chen, Hua Chen, Yangyang Yu, Chengzhao Luo, Chengze Xu, Xin Zhou, Zhenwei Ren, Yu Chen","doi":"10.1021/acsphotonics.4c01767","DOIUrl":null,"url":null,"abstract":"Nickel oxide (NiO<sub><i>x</i></sub>) has been extensively adopted as a promising hole transport material for perovskite light-emitting diodes (PeLEDs). However, its shallow valence band induces a large hole injection barrier for pure-blue PeLEDs with moderate device performances. Herein, an ingenious interface layer of ammonium molybdate (AMM) is proposed to successfully tailor the NiO<sub><i>x</i></sub> energy band for fast hole injection. After careful comparisons with pristine NiO<sub><i>x</i></sub> and conventional MoO<sub>3</sub> modification layer, we demonstrate the superior capacity of AMM to precisely tune the valence band of NiO<sub><i>x</i></sub> for efficient hole injection and thus, a balanced charge injection in the devices. As a result, we reveal the favorable energy band of NiO<sub><i>x</i></sub>-AMM for one of the best-performing pure-blue PeLEDs with an impressive efficiency of 9.15% at 473 nm and a high brightness of 5550 cd m<sup>–2</sup>. More importantly, we demonstrate a remarkably low turn-on voltage of 2.4 V, being the smallest turn-on voltage for pure-blue PeLEDs through a sufficient hole injection. Consequently, this work contributes to a feasible and efficient approach to tailor the NiO<sub><i>x</i></sub> energy band for highly performing pure-blue PeLEDs.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"30 1","pages":""},"PeriodicalIF":6.5000,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Photonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1021/acsphotonics.4c01767","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Nickel oxide (NiOx) has been extensively adopted as a promising hole transport material for perovskite light-emitting diodes (PeLEDs). However, its shallow valence band induces a large hole injection barrier for pure-blue PeLEDs with moderate device performances. Herein, an ingenious interface layer of ammonium molybdate (AMM) is proposed to successfully tailor the NiOx energy band for fast hole injection. After careful comparisons with pristine NiOx and conventional MoO3 modification layer, we demonstrate the superior capacity of AMM to precisely tune the valence band of NiOx for efficient hole injection and thus, a balanced charge injection in the devices. As a result, we reveal the favorable energy band of NiOx-AMM for one of the best-performing pure-blue PeLEDs with an impressive efficiency of 9.15% at 473 nm and a high brightness of 5550 cd m–2. More importantly, we demonstrate a remarkably low turn-on voltage of 2.4 V, being the smallest turn-on voltage for pure-blue PeLEDs through a sufficient hole injection. Consequently, this work contributes to a feasible and efficient approach to tailor the NiOx energy band for highly performing pure-blue PeLEDs.
作为钙钛矿发光二极管的空穴传输材料,氧化镍(NiOx)已被广泛采用。然而,它的浅价带导致了一个大的空穴注入势垒,对于器件性能中等的纯蓝色pled。本文提出了一种巧妙的钼酸铵(AMM)界面层,成功地定制了用于快速空穴注入的NiOx能带。经过与原始NiOx和传统MoO3修饰层的仔细比较,我们证明了AMM的卓越能力,可以精确调整NiOx的价带,从而实现有效的空穴注入,从而在器件中实现平衡的电荷注入。因此,我们揭示了NiOx-AMM的有利能带,可用于性能最佳的纯蓝色pled之一,在473 nm处具有令人惊叹的9.15%效率和5550 cd m-2的高亮度。更重要的是,我们展示了一个非常低的2.4 V的导通电压,这是通过足够的空穴注入纯蓝色pled的最小导通电压。因此,这项工作有助于为高性能纯蓝色发光二极管提供一种可行而有效的方法来定制NiOx能带。
期刊介绍:
Published as soon as accepted and summarized in monthly issues, ACS Photonics will publish Research Articles, Letters, Perspectives, and Reviews, to encompass the full scope of published research in this field.