Stabilization mechanisms of polyimide-metallosiloxane nanocomposites against atomic oxygen impact

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
O.A. Serenko, U.S. Andropova, R.R. Aysin, V.G. Shevchenko, N.A. Tebeneva, V.N. Chernik, L.S. Novikov, A.M. Muzafarov
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Abstract

The structure and properties of sol–gel filled polyimide (PI) films were investigated as a protective coating for the low orbit devices. The organosoluble PI based on 4,4′-(9-fluorenylidene)dianiline and 3,3′,4,4′-diphenyloxide tetracarboxylic acid and tris-(methyldiethoxysiloxy)aluminium (Al-siloxane) and tris-(methyldiethoxysiloxy)iron (Fe-siloxane) as precursors of nanoparticles were used. A comparative analysis of the curing of Al-siloxane and Fe-siloxane in pure state and in the polymer matrix was carried out by FTIR spectroscopy. The type of precursor metal atom has no significant influence on the thermal, mechanical, and dielectric properties of PI nanocomposites, however the filler and the type of precursor metal atom determine their resistance to atomic oxygen (AO). PI filled with nanoparticles based on Fe-siloxane (PI-[FeOSi]) exhibit a higher AO resistance than PI-[AlOSi]. The SEM imaging showed that the protection mechanism of PIs with metallosiloxanes nanoparticles against the destructive AO effect is based on the formation of an external protective layer, morphology/continuity of which is determined by the nature of the metal atom. The protective layer on the PI-[FeOSi] surface is less susceptible to microcracking compared to the outer layer formed on the PI-[AlOSi] film.

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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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