{"title":"Probing the special angle in twisted bilayer MoS2 via angle-dependent scanning tunneling microscopy studies","authors":"Xueying Liu, Shiying Liu, Yulong Xiao, Chang Xu, Jiaxin Wu, Kaihui Li, Si-Yu Li, Anlian Pan","doi":"10.1007/s11433-024-2529-9","DOIUrl":null,"url":null,"abstract":"<div><p>Twisted transition metal dichalcogenides (TMDs) homo-bilayers host unique quantum properties, which can be tuned by interlayer twist angle <i>θ</i>. However, the systematic evolution of their typical electronic properties with respect to the twist angle <i>θ</i>, which is crucial for identifying the “special angle” analogous to the “magic angle” of twisted bilayer graphene in correlation physics studies, remains incompletely understood. Here, via scanning tunneling microscopy (STM) and spectroscopy (STS), we investigate the variation of the moiré potential, flat band, and layer polarization characteristics across a wide range of twist angle <i>θ</i> in twisted bilayer MoS<sub>2</sub> (TB-MoS<sub>2</sub>). The moiré potential of the valence band exhibits a non-monotonic variation with <i>θ</i>, peaking at a maximum value up to 204 meV at <i>θ</i>∼1.7°. Concurrently, at the same <i>θ</i>, the bandwidth of the flat band at the Γ<sub>V</sub> point of the valence band attains its minimum, precisely signifying the “special angle” <i>θ</i><sub>c</sub>∼1.7° in TB-MoS<sub>2</sub>. Interestingly, layer polarization in the moiré superlattice is spatially visualized through the distribution of local density of states (LDOS) at the energies of both Γ<sub>V</sub> and K<sub>V</sub> points of the valence band, where the polarization degree at the Γ<sub>V</sub> point demonstrates a close dependency on <i>θ</i>. Our findings deepen understanding of twist-angle effect in TMDs, advancing both fundamental physics and practical application.</p></div>","PeriodicalId":774,"journal":{"name":"Science China Physics, Mechanics & Astronomy","volume":"68 2","pages":""},"PeriodicalIF":6.4000,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Physics, Mechanics & Astronomy","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11433-024-2529-9","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Twisted transition metal dichalcogenides (TMDs) homo-bilayers host unique quantum properties, which can be tuned by interlayer twist angle θ. However, the systematic evolution of their typical electronic properties with respect to the twist angle θ, which is crucial for identifying the “special angle” analogous to the “magic angle” of twisted bilayer graphene in correlation physics studies, remains incompletely understood. Here, via scanning tunneling microscopy (STM) and spectroscopy (STS), we investigate the variation of the moiré potential, flat band, and layer polarization characteristics across a wide range of twist angle θ in twisted bilayer MoS2 (TB-MoS2). The moiré potential of the valence band exhibits a non-monotonic variation with θ, peaking at a maximum value up to 204 meV at θ∼1.7°. Concurrently, at the same θ, the bandwidth of the flat band at the ΓV point of the valence band attains its minimum, precisely signifying the “special angle” θc∼1.7° in TB-MoS2. Interestingly, layer polarization in the moiré superlattice is spatially visualized through the distribution of local density of states (LDOS) at the energies of both ΓV and KV points of the valence band, where the polarization degree at the ΓV point demonstrates a close dependency on θ. Our findings deepen understanding of twist-angle effect in TMDs, advancing both fundamental physics and practical application.
期刊介绍:
Science China Physics, Mechanics & Astronomy, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research.
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