Self-Heating-Based channel thermal noise of advanced Sub-5-nm-Node nanosheet FET

IF 4.4 2区物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Results in Physics Pub Date : 2024-12-01 DOI:10.1016/j.rinp.2024.108059

Ilho Myeong , Quan Nguyen-Gia , Ickhyun Song

引用次数: 0

Abstract

In this paper, the self-heating effect and channel thermal noise (S_id) in stacked nanosheet gate-all-around (GAA) field effect transistor (FET) are investigated and discussed. In order to calculate channel thermal noise in radio-frequency (RF) operation, various factors such as electron mobility, temperature, and the gate capacitance is extracted through simulation. In addition, the channel length modulation (CLM) effect is analyzed to estimate the gate length, which is one of the important factors in obtaining S_id. After that, S_id is calculated, depending on the channel width (T_w) of the nanosheet FET. Then, the dependency of the signal to noise ratio (SNR) on T_w is addressed. Based on the findings of this work, relevant guidelines on T_w specification are discussed in terms of both S_id and SNR.

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来源期刊

Results in Physics MATERIALS SCIENCE, MULTIDISCIPLINARYPHYSIC-PHYSICS, MULTIDISCIPLINARY

CiteScore

8.70

自引率

9.40%

发文量

754

审稿时长

50 days

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