High-Performance Dual-Mode UV Photodetection from a Single Maneuverable X-Shaped Cs3Cu2I5 Microcrystal

IF 15.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Nano Pub Date : 2024-12-01 DOI:10.1021/acsnano.4c12474
Huimin Yang, Xiaoming Mo, Wangbing Xiong, Kailian Dong, Yulu Zhou, Xiaoma Tao, Yifang Ouyang, Jialong Zhao, Guojia Fang
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Abstract

Ultraviolet photodetectors (UV PDs) based on microcrystals (MCs) have attracted extensive attention due to their outstanding detection performance. Nevertheless, precise manipulation of the MCs still remains challenging, which may hinder the mass processing and performance improvement of the UV PDs. In this work, a single high-quality Cs3Cu2I5 MC that had a special X-shaped morphology was demonstrated to be successfully manipulated to prepare high-performance UV PDs by virtue of optical focusing, probe micromanipulation, and direct-write photolithography techniques. The UV PDs, prepared on the counter limbs and adjacent limbs of the single X-shaped Cs3Cu2I5 MC, exhibited distinctly different dual-mode photoresponse under 254 nm UVC and 310 nm UVB irradiations. At light intensity as low as 2.59 μW/cm2, the counter electrode and adjacent electrode UV PDs showed quite a high responsivity of up to 3376 A/W, a specific detectivity of up to 2.37 × 1014 Jones, and an on/off ratio of up to 1.79 × 102 at a bias voltage of 5 V. Besides, even after 28,800 s (8 h) of continuous operation under dual-mode UV irradiations at 254 and 310 nm, the unpackaged device showed extraordinary stability in the photocurrents in ambient air. Our findings provide inspiration for preparing high-performance dual-mode UV PDs based on the microscale perovskite-inspired copper halides or other semiconductor MCs.

Abstract Image

基于单个可操作x形Cs3Cu2I5微晶体的高性能双模紫外光探测
基于微晶体(MCs)的紫外光电探测器(UV PDs)因其优异的探测性能而受到广泛关注。然而,精确操纵mc仍然具有挑战性,这可能会阻碍UV pd的大规模加工和性能改进。在这项工作中,通过光学聚焦、探针微操作和直写光刻技术,成功地制备了具有特殊x形形态的单个高质量Cs3Cu2I5 MC,以制备高性能UV pd。在单x形Cs3Cu2I5 MC的对肢和邻肢上制备的UV pd在254 nm UVC和310 nm UVB照射下表现出明显不同的双模光响应。在低至2.59 μW/cm2的光强下,对电极和相邻电极的UV二极管在5 V偏置电压下的响应度高达3376 a /W,比检出率高达2.37 × 1014 Jones,通/关比高达1.79 × 102。此外,即使在254和310 nm双模紫外线照射下连续工作28,800 s (8 h)后,未封装的器件在环境空气中的光电流中也表现出非凡的稳定性。我们的发现为制备基于微尺度钙钛矿激发的卤化铜或其他半导体MCs的高性能双模UV pd提供了灵感。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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