Rapid conduction of NiO-based ceramic resistors: the competitive relationship between electron–hole exchange and screening effect

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Juan Zeng, Mengshi Zeng, Huachang Wang, Yuanyu Wang, Bing Li, Xu Huang, Jingsong Liu
{"title":"Rapid conduction of NiO-based ceramic resistors: the competitive relationship between electron–hole exchange and screening effect","authors":"Juan Zeng,&nbsp;Mengshi Zeng,&nbsp;Huachang Wang,&nbsp;Yuanyu Wang,&nbsp;Bing Li,&nbsp;Xu Huang,&nbsp;Jingsong Liu","doi":"10.1007/s10854-024-13959-6","DOIUrl":null,"url":null,"abstract":"<div><p>NiO-based ceramic resistors doped with Li<sup>+</sup>, Na<sup>+</sup>, and K<sup>+</sup> were prepared using the traditional solid-state method. The effects of microstructure and electrical properties of NiO-based ceramic resistors doped with alkali metal ions of varying ionic radii were investigated. XPS and Raman spectra indicate that doping with alkali metal ions promotes the valence state change of nickel ions from Ni<sup>2+</sup> to Ni<sup>3+</sup>, facilitating charge transfer. The acceleration of charge transfer is beneficial for decreasing resistivity, improving single-pulse discharge rate, and optimizing <i>I</i>–<i>V</i> characteristics. Additionally, the increasing difference in radius between the dopant ions and Ni<sup>2+</sup> ions enhances the screening effect, which increasingly hinders the charge transfer process. The NiO-based ceramic resistor doped with Li<sup>+</sup> ions exhibited the best comprehensive electrochemical performance with a nonlinear coefficient <i>α</i> of 1.04, a resistivity <i>ρ</i> value of 4.83 Ω·cm, a shortest single-pulse discharge time <i>t</i><sub>0.9</sub> of 94 ns, and a resistance temperature coefficient <i>α</i><sub>T</sub> value of − 1.25 × 10<sup>–2</sup> °C<sup>−1</sup>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13959-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

NiO-based ceramic resistors doped with Li+, Na+, and K+ were prepared using the traditional solid-state method. The effects of microstructure and electrical properties of NiO-based ceramic resistors doped with alkali metal ions of varying ionic radii were investigated. XPS and Raman spectra indicate that doping with alkali metal ions promotes the valence state change of nickel ions from Ni2+ to Ni3+, facilitating charge transfer. The acceleration of charge transfer is beneficial for decreasing resistivity, improving single-pulse discharge rate, and optimizing IV characteristics. Additionally, the increasing difference in radius between the dopant ions and Ni2+ ions enhances the screening effect, which increasingly hinders the charge transfer process. The NiO-based ceramic resistor doped with Li+ ions exhibited the best comprehensive electrochemical performance with a nonlinear coefficient α of 1.04, a resistivity ρ value of 4.83 Ω·cm, a shortest single-pulse discharge time t0.9 of 94 ns, and a resistance temperature coefficient αT value of − 1.25 × 10–2 °C−1.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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