Recent Progress in Direct X-Ray Detectors Based on Metal Oxide Wide Bandgap Semiconductors: A Review

IF 4.3 2区综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Journal Pub Date : 2024-10-07 DOI:10.1109/JSEN.2024.3454965

Yi Li;Xing Wang;Jie Liang;Lei Zhang;Jianhua Zhang

引用次数: 0

Abstract

The direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in medical diagnosis, material sciences, and industrial nondestructive testing. The wide bandgap (WBG) semiconductors with excellent electronic/optical properties, high breakdown field, high stability, and high radiation resistance are appealing options for X-ray detection applications. This article presents a comprehensive review of the applications of inorganic WBG semiconductors for X-ray detection in the past several decades. Different architectures of direct X-ray detectors, which are based on varied wide bandgap semiconductors, including metal oxides (Ga2O3, Bi2O3, PbO, and ZnO) and operate on different working principles, are introduced and discussed systematically. Finally, the possible challenges and opportunities in the future development of WBG semiconductors-based direct X-ray detectors are discussed.

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基于金属氧化物宽禁带半导体的直接x射线探测器研究进展

利用半导体材料直接转换x射线辐照是医学诊断、材料科学和工业无损检测领域的一项新兴技术。宽带隙（WBG）半导体具有优异的电子/光学性能、高击穿场、高稳定性和高抗辐射性能，是x射线探测应用的诱人选择。本文综述了近几十年来无机WBG半导体在x射线探测中的应用。本文系统地介绍和讨论了基于各种宽禁带半导体(包括金属氧化物（Ga2O3, Bi2O3， PbO和ZnO）的不同结构和不同工作原理的直接x射线探测器。最后，讨论了WBG半导体直接x射线探测器未来发展可能面临的挑战和机遇。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Sensors Journal 工程技术-工程：电子与电气

CiteScore

7.70

自引率

14.00%

发文量

2058

审稿时长

5.2 months

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