{"title":"A SET-tolerant StrongARM comparator with improved performance","authors":"Chentian Zhou, Yuanyuan Han, Xu Cheng, Xiaoyang Zeng","doi":"10.1049/ell2.70094","DOIUrl":null,"url":null,"abstract":"<p>In this paper, a radiation hardened by design StrongARM comparator is proposed to mitigate the radiation effects. With 12 additional transistors compared to the conventional one, the proposed structure shows much higher immunity to single-event transients. During the amplification phase, when the input differential voltage is 10 mV, the proposed structure can withstand up to 18fC free charge, 45x far surpassing the conventional structure. During the regeneration phase, every sensitive node in the proposed structure can withstand a 200 fC-injected charge. Compared to other redundant structures with performance deterioration, the proposed architecture exhibits high-speed characteristics. When the differential voltage between two inputs is 1 mV, the delay of the new structure is 168.26 ps and the speed improvement is 118.02% over the conventional structure.</p>","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":"60 23","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70094","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/ell2.70094","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a radiation hardened by design StrongARM comparator is proposed to mitigate the radiation effects. With 12 additional transistors compared to the conventional one, the proposed structure shows much higher immunity to single-event transients. During the amplification phase, when the input differential voltage is 10 mV, the proposed structure can withstand up to 18fC free charge, 45x far surpassing the conventional structure. During the regeneration phase, every sensitive node in the proposed structure can withstand a 200 fC-injected charge. Compared to other redundant structures with performance deterioration, the proposed architecture exhibits high-speed characteristics. When the differential voltage between two inputs is 1 mV, the delay of the new structure is 168.26 ps and the speed improvement is 118.02% over the conventional structure.
期刊介绍：
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
Scope
As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below.
Antennas and Propagation
Biomedical and Bioinspired Technologies, Signal Processing and Applications
Control Engineering
Electromagnetism: Theory, Materials and Devices
Electronic Circuits and Systems
Image, Video and Vision Processing and Applications
Information, Computing and Communications
Instrumentation and Measurement
Microwave Technology
Optical Communications
Photonics and Opto-Electronics
Power Electronics, Energy and Sustainability
Radar, Sonar and Navigation
Semiconductor Technology
Signal Processing
MIMO
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