Photocurrent and electrical properties of SiGe nanocrystals grown on insulator via solid-state dewetting of Ge/SOI for Photodetection and solar cells applications

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2024-11-27 DOI:10.1016/j.vacuum.2024.113892

A.K. Aladim , Mansour Aouassa , S. Amdouni , Mohammed Bouabdellaoui , Walter B. Pessoa , Mohammed Ibrahim , K.M.A. Saron , Isabelle Berbezier

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引用次数: 0

Abstract

In this study, we present the photocurrent and electrical characterization of silicon-germanium nanocrystals (SiGe NCs) on an insulator (SiO₂). The SiGe NCs were grown through a hybrid process combining solid-phase dewetting of an ultra-thin silicon-on-insulator (UT-SOI) film with the epitaxial deposition of a thin germanium layer using ultra-high vacuum molecular beam epitaxy (UHV-MBE). These SiGe NCs were successfully integrated into the insulator layer of a metal-insulator-semiconductor (MIS) structure for optoelectronic applications. The enhanced MIS structure, featuring integrated SiGe NCs, exhibited notable transport and optoelectric properties as determined by current-voltage and impedance spectroscopy. The results indicated that the MIS structure functions as a Schottky diode, demonstrating a high rectification ratio (RR) of approximately 1000 and a Schottky barrier height (ϕ_B) of 0.73 eV. Additionally, this structure displayed a broad spectral response in the visible range, with a significant photovoltaic effect. The equivalent circuit of the MIS structure was also derived for an AC signal using impedance spectroscopy. These findings offer a promising scalable method for the monolithic integration and efficient growth of SiGe nanocrystals, paving the way for advancements in self-powered photodetectors and ultrathin solar cells.

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.