Exploring the edge effect of single crystal silicon in nanoindentation with two indenters: A molecular dynamics investigation

Abstract

Silicon is an important semiconductor material, and its mechanical properties at the workpiece edges are crucial for its applications at the nanoscale. This article uses a molecular dynamics model with two indenters to study the effect of indenter distance on the edge effect of single-crystal silicon. The simulation results show that as the distance between the two indenters gradually increases from 5 Å, the surface edge of the single crystal silicon workpiece collapses, the side accumulates, and the internal phase transition region and stress region gradually change from a whole to two separate entities. The average value of force Fx first decreases and then increases with the increasing indenter distance. This study elucidates the influence of the distance between the dual indenters on the edge effect of single-crystal silicon nanoindentation, enriching our understanding of the edge effects that occur in the single-crystal Si application process.