Kinetic study of a-Si crystallization induced by an intermetallic compound

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2024-11-26 DOI:10.1016/j.vacuum.2024.113877

Evgeny T. Moiseenko , Vladimir V. Yumashev , Roman R. Altunin , Leonid A. Solovyov , Sergey M. Zharkov

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引用次数: 0

Abstract

The problem under study is concerned with amorphous silicon (a-Si) crystallization which is induced by an intermetallic compound, with this compound chosen to be Al₂Cu, formed by a solid-state reaction between nanolayers of aluminum and copper in a Cu/Al/a-Si multilayer system. In the case of crystallization initiated by the intermetallic compound Al₂Cu, the crystallization temperature of amorphous silicon was found to be ≈ 300°С (upon heating at a rate of 5–10 °C/min), which was significantly higher than in the case of pure Al (≈170°С), but lower as compared to using pure Cu (≈485°С). The higher crystallization temperatures in comparison with aluminium-induced crystallization are assumed to be caused by a decrease in the number of free electrons due to the presence of copper and formation of the Al₂Cu phase. By kinetic modeling, it was revealed that the mechanism of a-Si crystallization induced by the intermetallic compound Al₂Cu was similar to the mechanism of Al-induced crystallization of a-Si in multilayer (Al/a-Si)_n films, i.e the process of a-Si crystallization occurred in two subsequent stages: Cn-X→Fn. Kinetic parameters of silicon crystallization for each reaction step were obtained. The enthalpy of a-Si crystallization initiated by Al₂Cu was estimated to be ΔH = 12.3 ± 0.5 kJ/mol.

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.