Synergistic impact of Al2O3 capping layer and deposition temperature for enhancing the ferroelectricity of undoped-HfO2 thin films

IF 2.4 4区 物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Sang Han Ko , Seung-Eon Moon , Sung Min Yoon
{"title":"Synergistic impact of Al2O3 capping layer and deposition temperature for enhancing the ferroelectricity of undoped-HfO2 thin films","authors":"Sang Han Ko ,&nbsp;Seung-Eon Moon ,&nbsp;Sung Min Yoon","doi":"10.1016/j.cap.2024.11.016","DOIUrl":null,"url":null,"abstract":"<div><div>Synergistic effects of Al<sub>2</sub>O<sub>3</sub> capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO<sub>2</sub> thin films were investigated. The use of an Al<sub>2</sub>O<sub>3</sub> capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO<sub>2</sub> thin films, leading to a net remnant polarization (2P<sub>r</sub>) of &gt;20 μC/cm<sup>2</sup> when deposited &lt;260 °C. The HfO<sub>2</sub> thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10<sup>−6</sup> A/cm<sup>2</sup> at an electric field of 2 MV/cm, accompanied by a high 2P<sub>r</sub> and an endurance of &gt;10<sup>7</sup> cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO<sub>2</sub> thin films by means of the Al<sub>2</sub>O<sub>3</sub> capping process.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 1-8"},"PeriodicalIF":2.4000,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173924002736","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Synergistic effects of Al2O3 capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO2 thin films were investigated. The use of an Al2O3 capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO2 thin films, leading to a net remnant polarization (2Pr) of >20 μC/cm2 when deposited <260 °C. The HfO2 thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10−6 A/cm2 at an electric field of 2 MV/cm, accompanied by a high 2Pr and an endurance of >107 cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO2 thin films by means of the Al2O3 capping process.

Abstract Image

Al2O3盖层和沉积温度对未掺杂hfo2薄膜铁电性的协同影响
研究了220 ~ 280℃范围内Al2O3封盖层和沉积温度对未掺杂HfO2薄膜铁电性能的协同效应。在原子层沉积(ALD)过程中使用Al2O3封盖层可以在未掺杂的HfO2薄膜中诱导出铁电正交相,当沉积温度为260℃时,净残余极化(2Pr)为20 μC/cm2。在240°C下沉积的HfO2薄膜在2 MV/cm电场下的漏电流密度为5.7 × 10−6 a /cm2,具有较高的2Pr和107次循环的续航能力。在3.5 ~ 4.5 V电压范围内,铁电极化反转的开关时间为2.1 ~ 1.7 μs。本工作的结果证明了沉积温度条件对HfO2薄膜铁电性能的影响。
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来源期刊
Current Applied Physics
Current Applied Physics 物理-材料科学:综合
CiteScore
4.80
自引率
0.00%
发文量
213
审稿时长
33 days
期刊介绍: Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications. Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques. Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals. Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review. The Journal is owned by the Korean Physical Society.
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