Stretch-induced tunability of electrical transport properties of three-dimensional graphene-based foam structures

Abstract

The fast electron transport and superior multidirectional flexibility of three-dimensional graphene-based foams (GFs) are pivotal in the realm of stretchable electronics. We observed pre-stretching induced modulation of the temperature-dependent electrical resistivity of GFs, where, as the pre-stretch strain level increased, the distinct temperature dependence of the resistivity of a GF sample would change and might even exhibit a notable transition from negative dependence to positive dependence. We attempted to interpret the phenomenon by proposing a new conduction network model that represents GF structures as interconnected polycrystalline graphene islands and island/island conduction junctions and incorporates three conduction mechanisms: thermally activated conduction across grain boundaries and phonon-limited conduction avoiding grain boundaries within a graphene island, and fluctuation-induced tunneling conduction across island/island conduction junctions. By fitting-assisted analysis, we found that the temperature dependence of the resistivity of a GF sample primarily relies on the discrete quantities of graphene islands and island/island conduction junctions, and the resistivity originating from each conduction mechanism. As pre-stretch strain level increases, these factors would change due to conduction network alteration, local strain-induced phonon hardening, and local strain-induced transport gap modulation, all resulting from pre-stretching. Our results offer valuable insights into the optimization of GFs-based stretchable electronic devices, such as performance enhancement through structural modifications.