Jiaojiao Liu , Ying Wu , Zhenbo Chen , Xiaoming Yu , Xuan Yu , Zhenhua Li , Hai Zhang , Yingtang Zhou , Jing Zhou , Yu Cao
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引用次数: 0
Abstract
Antimony selenide (Sb2Se3) has attracted much attention in photodetectors (PDs) for its abundant reserves, low toxicity, low price, and high absorption coefficient. While the PDs performance has been limited by the transverse growth pattern of Sb2Se3. In this study, CdCl2-treated SnO2 electron transport layer (ETL) substrate has been used to grow Sb2Se3, which induces the preferential growth of Sb2Se3 along the (002) direction, and the grains are transformed from transverse to longitudinal. This enhanced carrier mobility, resulted in improved photocurrent (0.489 mA), responsivity (70 mA W−1), and specific detectivity (9.29 × 1013 Jones) than the pristine device, which is enhanced by 18, 17, and 8 times, respectively. The results indicate that the CdCl2 treatment effectively optimizes the SnO2 ETL interfacial properties and regulates the longitudinal growth of Sb2Se3 grains, which guides the further development of Sb2Se3 PDs.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
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