The effect of the precursors and chemical vapor deposition process on the synthesis of two-dimensional molybdenum nitride nanomaterials

Abstract

Researchers have extensively investigated 2D nanomaterials of TMN owing to its superior chemical and physical characteristics and numerous potential uses. Research on the synthesis of TMNs was insufficient and remained stagnant. Here, we alter precursor types and substrates and develop three CVD procedures for synthesizing TMN. High-quality signal-crystal MoN nanoflakes were synthesized using sodium molybdate precursors. The same growth conditions directly induced the formation of Mo₅N₆ nanofilms on sapphire substrate. We synthesized large-area MoN nanofilms on silicon substrates by conducting a nitrogen substitution reaction on MoS₂ nanofilms. MoS₂ serves as the precursor for MoN nanofilms synthesis via nitridation. MoN's characteristic peak at 143.34 cm⁻¹ was located using Raman spectroscopy. We obtained epitaxial growth of Mo₅N₆ nanofilms at low pressure (66 cm Hg) on a sapphire substrate. Mo₅N₆ nanofilms exhibited a distinctive Raman spectroscopy signal at 154.03 cm⁻¹. In anticipation of its prospective applications, we assessed the electrical properties of Mo₅N₆ nanofilms. Additionally, the resistivity of Mo₅N₆ was found to be 1.555*10⁻⁵ Ωcm. Large-area 2D nanomaterials, such as Mo₅N₆, have the potential to be employed as graphene or other semimetal materials in the electronic device industry, as evidenced by the temperature dependency of the conductivity test.