First-principles calculations to investigate the bulk, electronic, optical and thermoelectric properties of BaGe2As2 and BaGe2P2 alloys

Debora Nameme , George S. Manyali , Michael Nakitare Waswa , Job W. Wafula
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The current work aimed at conducting an exhaustive study on the bulk, electronic, and optical properties as well as the thermoelectric property of BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>P<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> zintl phase compounds. Density functional theory implemented in Quantum ESPRESSO code combined with other processing codes such as Thermo<span><math><msub><mrow></mrow><mrow><mo>−</mo></mrow></msub></math></span>pw and BoltzTrap were employed in this study. The lattice constants computed were found to agree well with the other theoretical and experimental results, demonstrating validity of the study. Both compounds are brittle, elastically anisotropic and mechanically as well thermodynamically stable. The materials in this investigation were discovered to be semiconductors with indirect band gaps of 0.73 eV and 1.14 eV for BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>P<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> respectively. Therefore, both materials are appropriate for use in the electronics sector, notably in temperature control applications. The PDOS analysis suggests that P and As in BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>P<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, respectively, dominate the conduction band, whereas Ge dominates the valence band in both cases. The results also show that BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>P<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> out-performs BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> in terms of optical absorption coefficient. Both BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>P<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> are excellent p-type thermoelectric materials but BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>P<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> has a greater figure of merit than BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, making it a potential thermoelectric material. Lastly, the figure of merit values determined in this study are considered approximations since the lattice thermal conductivities of complex BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and BaGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>P<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> compounds were not computed due to limited computational resources.</div></div>","PeriodicalId":101087,"journal":{"name":"Results in Materials","volume":"24 ","pages":"Article 100635"},"PeriodicalIF":0.0000,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Results in Materials","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590048X24001092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The structural, elastic, electronic, and optical properties of BaGe2As2 and BaGe2P2 have been theoretically investigated, but their thermoelectric properties have not been reported. The current work aimed at conducting an exhaustive study on the bulk, electronic, and optical properties as well as the thermoelectric property of BaGe2As2 and BaGe2P2 zintl phase compounds. Density functional theory implemented in Quantum ESPRESSO code combined with other processing codes such as Thermopw and BoltzTrap were employed in this study. The lattice constants computed were found to agree well with the other theoretical and experimental results, demonstrating validity of the study. Both compounds are brittle, elastically anisotropic and mechanically as well thermodynamically stable. The materials in this investigation were discovered to be semiconductors with indirect band gaps of 0.73 eV and 1.14 eV for BaGe2As2 and BaGe2P2 respectively. Therefore, both materials are appropriate for use in the electronics sector, notably in temperature control applications. The PDOS analysis suggests that P and As in BaGe2P2 and BaGe2As2, respectively, dominate the conduction band, whereas Ge dominates the valence band in both cases. The results also show that BaGe2P2 out-performs BaGe2As2 in terms of optical absorption coefficient. Both BaGe2As2 and BaGe2P2 are excellent p-type thermoelectric materials but BaGe2P2 has a greater figure of merit than BaGe2As2, making it a potential thermoelectric material. Lastly, the figure of merit values determined in this study are considered approximations since the lattice thermal conductivities of complex BaGe2As2 and BaGe2P2 compounds were not computed due to limited computational resources.
用第一性原理计算研究BaGe2As2和BaGe2P2合金的体积、电子、光学和热电性能
理论上研究了BaGe2As2和BaGe2P2的结构、弹性、电子和光学性质,但其热电性质尚未报道。目前的工作旨在对BaGe2As2和BaGe2P2 zintl相化合物的体、电子、光学性质以及热电性质进行详尽的研究。在量子浓缩码中实现密度泛函理论,并结合其他处理代码(如Thermo - pw和BoltzTrap)进行研究。计算的晶格常数与其他理论和实验结果吻合较好,证明了研究的有效性。这两种化合物都是脆的、弹性各向异性的、机械和热力学稳定的。本研究中发现的材料为半导体,BaGe2As2和BaGe2P2的间接带隙分别为0.73 eV和1.14 eV。因此,这两种材料都适用于电子行业,特别是温度控制应用。PDOS分析表明,在BaGe2P2和BaGe2As2中,P和As分别主导导带,而Ge在两种情况下都主导价带。结果还表明,在光学吸收系数方面,BaGe2P2优于BaGe2As2。BaGe2As2和BaGe2P2都是优秀的p型热电材料,但BaGe2P2比BaGe2As2具有更大的优点,使其成为一种潜在的热电材料。最后,由于计算资源有限,没有计算复合BaGe2As2和BaGe2P2化合物的晶格热导率,因此本研究中确定的优点值图被认为是近似值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
5.30
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