High-performance single SiC nanocable-based plasmonic photodetectors for ultraviolet communication systems

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mi Chen , Zijian Tang , Hongmei Liu , Peifen Zhu , Ying Su , Bingshe Xu , Pan Wang , Guodong Wei
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Abstract

Silicon carbide (SiC) nanowires are the most promising candidate for developing high-performance single-nanowire-based UV photodetector (PD) with outstanding photoelectronic properties and low power consumption. However, SiC single-nanowire-based UV PDs commonly suffer from very low light current on the order of pA or nA, requiring precision equipment or an extra current amplification circuit, which greatly limit their practical application. To overcome this bottleneck, novel SiC single nanocable-based plasmonic PDs with the light current on the order of mA were successfully developed with the features of improving light absorption and reducing the dark current. The SiC/SiO2@Ag nanocables consisting of SiC nanowire core and uniform SiO2 shell encrusted with scattered and isolated Ag nanoparticles (NPs) were fabricated by a simple, low-cost, and space-confined vacuum-heating strategy using ultralong SiC nanowires and silver nitrate precursor followed by the annealing process. In such architecture, the in situ resulting SiO2 shell can effectively passivate the surface defects of the SiC nanowire core, restrain the photo-excited carrier's losses, and effectively block the hot electron injection, leading to a great reduction in the dark current and enhancement in the light current. The encrusted Ag NPs on the nanocable surface exhibited a strong LSPR effect with significantly increased optical absorption. Benefiting from the synergistic effect of SiO2 passivation and Ag nanoparticle LSPR effect, the device current increased dramatically by several orders of magnitude to reach 0.37 mA at a bias voltage of 3 V. Moreover, the developed SiC/SiO2@Ag PDs had faster response speed (0.27 s), lower dark current at the nA level, and high stability, which can be competent for the development of real-time, accurate, and cost-effective communication systems and flame detection with impressive switching ratio as high as 66012.

Abstract Image

用于紫外通信系统的高性能单SiC纳米电缆等离子体光电探测器
碳化硅(SiC)纳米线具有优异的光电子性能和低功耗,是开发高性能单纳米线紫外光电探测器(PD)最有前途的候选材料。然而,基于SiC单纳米线的UV pd通常具有非常低的光电流,在pA或nA数量级,需要精密的设备或额外的电流放大电路,这极大地限制了它们的实际应用。为了克服这一瓶颈,成功地开发了光电流在mA量级的新型SiC单纳米电缆等离子体pd,具有提高光吸收和降低暗电流的特点。采用超长SiC纳米线和硝酸银前驱体,采用简单、低成本、密闭的真空加热工艺制备了SiC/SiO2@Ag纳米电缆,该纳米电缆由SiC纳米线芯和均匀的SiO2壳层包裹着分散和隔离的Ag纳米粒子(NPs)组成。在这种结构下,原位生成的SiO2壳层可以有效钝化SiC纳米线芯的表面缺陷,抑制光激发载流子的损耗,有效阻断热电子注入,使暗电流大大降低,光电流增强。纳米表面包覆银纳米粒子表现出较强的LSPR效应,光吸收显著增加。得益于SiO2钝化和Ag纳米粒子LSPR效应的协同作用,器件电流在3 V偏置电压下急剧增加了几个数量级,达到0.37 mA。此外,所开发的SiC/SiO2@Ag pd具有更快的响应速度(0.27 s), nA级暗电流更低,稳定性高,可用于开发实时,准确,经济高效的通信系统和火焰检测,开关比高达66012。
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来源期刊
CiteScore
11.30
自引率
3.90%
发文量
130
审稿时长
31 days
期刊介绍: Materials Today Nano is a multidisciplinary journal dedicated to nanoscience and nanotechnology. The journal aims to showcase the latest advances in nanoscience and provide a platform for discussing new concepts and applications. With rigorous peer review, rapid decisions, and high visibility, Materials Today Nano offers authors the opportunity to publish comprehensive articles, short communications, and reviews on a wide range of topics in nanoscience. The editors welcome comprehensive articles, short communications and reviews on topics including but not limited to: Nanoscale synthesis and assembly Nanoscale characterization Nanoscale fabrication Nanoelectronics and molecular electronics Nanomedicine Nanomechanics Nanosensors Nanophotonics Nanocomposites
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