Abdul Wahab , Farooq Ali , Mazia Asghar , Hamid Ullah , Sohail Iftikhar , Young-Han Shin , Ramesh Sharma , Essam A. Al-Ammar
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引用次数: 0
Abstract
We investigated the electronic structure, optical, and thermoelectric characteristics of the Janus SnXY (X≠Y= O, S, Se) compounds. We observed from our calculations that all the configurations exhibits dynamical stability due to lower formation energies. Interestingly, we estimate direct band gaps of 1.91 eV for SnO₂, 2.44 eV for SnSeO, and 1.86 eV for SnSO, highlighting their potential for optoelectronic uses due to reduced energy loss. Furthermore, SnS₂, SnSe₂, and SnSeS display indirect band gaps of 2.26 eV, 1.20 eV, and 1.66 eV, respectively. The prominent absorption peaks confirm the direct transition of electrons from the valence band to the conduction band. Thermoelectric application performance is critically dependent on the figure of merit (ZT). Our predicted results show that the Sn-based janus materials enhances the ZT value, for instance the ZT of SnSeO (1.24) at higher temperature.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces