Realization of nickel doped carbon enriched graphitic carbon nitride for diffusion controlled charge storage

IF 8.9 2区 工程技术 Q1 ENERGY & FUELS
Malatesh S. Pujar , Sharanabasava Yalavara , Vidyalaxmi Wadeyar , Sudharani Khot , Nilesh Chougula , Smita Kalagi , Shidaling Matteppanavar , Sameer Kulkarni
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Abstract

Here in this communication we report synthesis of Nickel doped carbon enriched graphitic carbon nitride for supercapacitor applications. Although the FTIR spectra of carbon enriched gC3N4 indicates the destruction of out of plane heptazine ring but simultaneously shows the preservation of tri – s - triazine structure of gC3N4. There is a blue shift in absorption peak resulting in the widening of the band gap by doping the carbon enriched gC3N4 with nickel. In XRD spectrum the peak shift towards lower angle with decrease in the intensity is observed indicating widening in in-plane stacking of s- triazine rings. The cyclic voltammetry studies show increase in the specific capacitance from 91.5F/g for gC3N4 to as high as 226F/g @ 10 mV/s for nickel doped carbon enriched gC3N4 (NiCgC3N4). This increase in the charge storage can be attributed to the increase in the diffusion of electrons aided by doping of carbon enriched graphitic carbon nitride by nickel as suggested by Randles Sevick calculation. The Lindstrom & Dunn's methods points out that the charge storage is by faradaic diffusion controlled processes at the electrode and electrolyte interface. Furthermore NiCgC3N4 electrode exhibits a good stability of 79.5 % up to 4000 cycles. The as synthesized electrode material NiCgC3N4 basically shows the psuedocapacitive nature. The asymmetric two electrode device showed a specific capacitance of 119F/g @ 1 A/g. A maximum energy density of 214 Wh/Kg with power density of 1800 W/Kg is achieved for 1 A/g current density. Overall the synthesized NiCgC3N4 has shown good diffusion controlled charge storage material qualities.

Abstract Image

实现用于扩散控制电荷存储的掺镍富碳氮化石墨碳
在这篇通讯中,我们报告了用于超级电容器应用的掺镍富碳氮化石墨。虽然富碳 gC3N4 的傅立叶变换红外光谱表明平面外的庚嗪环被破坏,但同时也表明 gC3N4 的三-三-三嗪结构得以保留。在富碳 gC3N4 中掺入镍后,吸收峰出现蓝移,导致带隙变宽。在 XRD 光谱中,观察到峰值向低角度移动,强度降低,表明 s- 三嗪环的面内堆积增宽。循环伏安研究表明,掺镍富碳 gC3N4(NiCgC3N4)的比电容从 91.5F/g 增加到高达 226F/g(10 mV/s)。电荷存储量的增加可归因于 Randles Sevick 计算表明的富碳氮化石墨碳中掺杂镍后电子扩散的增加。Lindstrom & Dunn 的方法指出,电荷储存是通过电极和电解质界面上的法拉第扩散控制过程实现的。此外,NiCgC3N4 电极在 4000 次循环中表现出 79.5% 的良好稳定性。所合成的电极材料 NiCgC3N4 基本上表现出半电容性。不对称双电极装置的比电容为 119F/g @ 1 A/g。电流密度为 1 A/g 时,最大能量密度为 214 Wh/Kg,功率密度为 1800 W/Kg。总体而言,合成的 NiCgC3N4 显示出良好的扩散控制电荷存储材料特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of energy storage
Journal of energy storage Energy-Renewable Energy, Sustainability and the Environment
CiteScore
11.80
自引率
24.50%
发文量
2262
审稿时长
69 days
期刊介绍: Journal of energy storage focusses on all aspects of energy storage, in particular systems integration, electric grid integration, modelling and analysis, novel energy storage technologies, sizing and management strategies, business models for operation of storage systems and energy storage developments worldwide.
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